17835864. PULSED VOLTAGE SOURCE FOR PLASMA PROCESSING APPLICATIONS simplified abstract (Applied Materials, Inc.)

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PULSED VOLTAGE SOURCE FOR PLASMA PROCESSING APPLICATIONS

Organization Name

Applied Materials, Inc.

Inventor(s)

A N M Wasekul Azad of Santa Clara CA (US)

Kartik Ramaswamy of San Jose CA (US)

Yang Yang of San Diego CA (US)

Yue Guo of Redwood City CA (US)

Fernando Silveira of Santa Clara CA (US)

PULSED VOLTAGE SOURCE FOR PLASMA PROCESSING APPLICATIONS - A simplified explanation of the abstract

This abstract first appeared for US patent application 17835864 titled 'PULSED VOLTAGE SOURCE FOR PLASMA PROCESSING APPLICATIONS

Simplified Explanation

The patent application describes a waveform generator used in plasma processing systems for the plasma processing of a substrate in a processing chamber.

  • The waveform generator includes a first voltage stage with a voltage source, a switch, a ground reference, and a transformer with a primary winding and a secondary winding.
  • The secondary winding is coupled to the ground reference and is connected to a load through a common node.
  • A diode is also coupled in parallel with the primary winding of the transformer.
  • The waveform generator also includes one or more additional voltage stages connected to the load through the common node.

Potential applications of this technology:

  • Plasma processing systems used in semiconductor manufacturing.
  • Plasma etching and deposition processes in the fabrication of integrated circuits.
  • Plasma cleaning and surface treatment in various industries.

Problems solved by this technology:

  • Provides a waveform generator for plasma processing systems that can generate the desired waveforms for efficient and effective plasma processing.
  • Allows for precise control of the plasma processing parameters.
  • Enables improved uniformity and repeatability of plasma processing results.

Benefits of this technology:

  • Improved efficiency and effectiveness of plasma processing.
  • Enhanced control over plasma processing parameters.
  • Increased uniformity and repeatability of plasma processing results.
  • Potential for cost savings and improved product quality in semiconductor manufacturing and other industries.


Original Abstract Submitted

Embodiments provided herein generally include apparatus, e.g., plasma processing systems, and methods for the plasma processing of a substrate in a processing chamber. Some embodiments are directed to a waveform generator. The waveform generator generally includes a first voltage stage having: a first voltage source; a first switch; a ground reference; a transformer having a first transformer ratio, the first transformer comprising: a primary winding coupled to the first voltage source and the ground reference; and a secondary winding having a first end and a second end, wherein the first end is coupled to the ground reference, and the second end is configured to be coupled to a load through a common node; and a first diode coupled in parallel with the primary winding of the first transformer. The waveform generator generally also includes one or more additional voltage stages coupled to a load through the common node.

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