17835863. INTERCONNECT VIA METAL-INSULATOR-METAL (MIM) FUSE FOR INTEGRATED CIRCUITRY simplified abstract (Intel Corporation)

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INTERCONNECT VIA METAL-INSULATOR-METAL (MIM) FUSE FOR INTEGRATED CIRCUITRY

Organization Name

Intel Corporation

Inventor(s)

Yao-Feng Chang of Flagstaff AZ (US)

INTERCONNECT VIA METAL-INSULATOR-METAL (MIM) FUSE FOR INTEGRATED CIRCUITRY - A simplified explanation of the abstract

This abstract first appeared for US patent application 17835863 titled 'INTERCONNECT VIA METAL-INSULATOR-METAL (MIM) FUSE FOR INTEGRATED CIRCUITRY

Simplified Explanation

The patent application describes a metal-insulator-metal (MIM) fuse for interconnecting integrated circuitry. The fuse is made up of a thin layer of a compound of metal and oxygen, which allows a small leakage current to pass through when a low voltage is applied. However, when a higher programming voltage is applied, the fuse irreversibly forms an open circuit. This is achieved by inducing a void between the electrode metallization features through Joule heating of the fuse material layer.

  • The patent application describes a metal-insulator-metal (MIM) fuse for interconnecting integrated circuitry.
  • The fuse is made up of a thin layer of a compound of metal and oxygen.
  • The fuse allows a small leakage current to pass through when a low voltage is applied.
  • When a higher programming voltage is applied, the fuse irreversibly forms an open circuit.
  • This is achieved by inducing a void between the electrode metallization features through Joule heating of the fuse material layer.

Potential Applications

  • Integrated circuitry interconnection
  • Circuit protection
  • Memory programming

Problems Solved

  • Reliable interconnection of integrated circuitry
  • Protection against overcurrent or short circuits
  • Efficient memory programming

Benefits

  • Improved reliability and performance of integrated circuitry
  • Enhanced circuit protection
  • Efficient and precise memory programming


Original Abstract Submitted

Interconnect via metal-insulator-metal (MIM) fuse for integrated circuitry. Two electrode metallization features, which may be within a backend of an IC die, are coupled through a via comprising a fuse material layer. The fuse material layer passes a non-zero leakage current when a lower read voltage is applied across the electrode metallization features, and irreversibly forms an open circuit when a higher programming voltage is applied across the electrode metallization features. The fuse material layer may be a compound of a metal and oxygen and be sufficiently thin to ensure a significant leakage current at the read voltage. Joule heating of the fuse material layer may induce a void between the electrode metallization features as the leakage current through the fuse material layer increases under higher voltages, creating an open circuit.

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