17835769. SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

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SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Meng-Han Lin of Hsinchu City (TW)

Chia-En Huang of Xinfeng Township (TW)

Sai-Hooi Yeong of Zhubei City (TW)

SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 17835769 titled 'SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF

Simplified Explanation

The patent application describes a semiconductor device that includes a memory structure and a test structure. The memory structure consists of multiple memory cells arranged in a specific pattern, while the test structure is located adjacent to the memory structure and includes a monitor pattern.

  • The memory structure of the semiconductor device comprises multiple memory cells arranged in a specific pattern.
  • The memory cells have channel films that extend vertically and share a ferroelectric film that extends vertically and laterally.
  • The test structure, located next to the memory structure, includes a monitor pattern.
  • The monitor pattern consists of a channel film and a ferroelectric film that extend vertically and laterally.

Potential applications of this technology:

  • This semiconductor device can be used in various electronic devices that require memory storage, such as computers, smartphones, and tablets.
  • The memory structure's unique arrangement and the inclusion of a test structure can improve the performance and reliability of the semiconductor device.

Problems solved by this technology:

  • The specific arrangement of the memory cells and the inclusion of a test structure help in identifying and resolving any issues or defects in the memory structure.
  • The use of a ferroelectric film in the memory cells can enhance the stability and durability of the memory structure.

Benefits of this technology:

  • The semiconductor device with this memory structure can provide improved memory storage capabilities and performance.
  • The inclusion of a test structure allows for easier testing and troubleshooting of the memory structure, leading to better quality control.
  • The use of a ferroelectric film in the memory cells enhances the reliability and longevity of the semiconductor device.


Original Abstract Submitted

A semiconductor device includes a memory structure comprising a plurality of first memory cells. The semiconductor device includes a test structure disposed next to the memory structure and comprising a first monitor pattern. The plurality of first memory cells, arranged along a first lateral direction, that have a plurality of first channel films extending along a vertical direction, respectively, and share a first ferroelectric film extending along the vertical direction and the first lateral direction. The first monitor pattern includes: (a) a second channel film extending along the vertical direction and the first lateral direction; and (b) a second ferroelectric film extending along the vertical direction and the first lateral direction.

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