17835688. Semiconductor Devices And Circuits With Increased Breakdown Voltage simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Semiconductor Devices And Circuits With Increased Breakdown Voltage
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Chan-Hong Chern of Palo Alto CA (US)
Cheng-Hsiang Hsieh of Taipei City (TW)
Semiconductor Devices And Circuits With Increased Breakdown Voltage - A simplified explanation of the abstract
This abstract first appeared for US patent application 17835688 titled 'Semiconductor Devices And Circuits With Increased Breakdown Voltage
Simplified Explanation
The patent application describes a switching circuit that includes a main circuit and an auxiliary circuit for surge protection. The main circuit has three nodes and is controlled by a control signal received at the first node. The second node receives a supply voltage.
- The main circuit includes a number of first transistors.
- The auxiliary circuit is electrically connected to the second node of the main circuit.
- The auxiliary circuit provides surge protection for the main circuit.
- The auxiliary circuit includes a second transistor.
- The breakdown voltage of the second transistor is different from the breakdown voltage of each first transistor.
Potential Applications
- Power distribution systems
- Electronic devices with switching circuits
- Surge protection in electrical circuits
Problems Solved
- Surge protection for the main circuit
- Preventing damage to the main circuit from voltage surges
Benefits
- Improved reliability of the switching circuit
- Enhanced protection against voltage surges
- Increased lifespan of the main circuit
Original Abstract Submitted
A switching circuit includes a main circuit including a number of first transistors. The main circuit has a first node, a second node, and a third node and is operative in response to a control signal received by the first node, and the second node is configured to receive a supply voltage. The switching circuit also includes an auxiliary circuit electrically coupled to the second node of the main circuit and configured to provide surge protection for the main circuit. The auxiliary circuit includes a second transistor. A breakdown voltage of the second transistor is different than a breakdown voltage of each first transistor of the number of first transistors.
