17835080. SEMICONDUCTOR DEVICE INCLUDING A NONVOLATILE VERTICAL MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)

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SEMICONDUCTOR DEVICE INCLUDING A NONVOLATILE VERTICAL MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SEMICONDUCTOR DEVICE

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Jaechul Lee of Hwaseong-si (KR)

Seungjae Sim of Hwaseong-si (KR)

Daehun Choi of Hwaseong-si (KR)

SEMICONDUCTOR DEVICE INCLUDING A NONVOLATILE VERTICAL MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17835080 titled 'SEMICONDUCTOR DEVICE INCLUDING A NONVOLATILE VERTICAL MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SEMICONDUCTOR DEVICE

Simplified Explanation

The abstract describes a semiconductor device that includes a stepped connection portion with conductive pad portions on a substrate. An insulating block covers the conductive pad portions and has a flat second surface parallel to the substrate. The insulating block is made of a silicon oxide film doped with a dopant element, which can be a metalloid or non-metal element with an atomic weight between 5 and 15. The device also includes plug structures passing through the insulating block in a vertical direction.

  • The semiconductor device has a stepped connection portion with multiple conductive pad portions.
  • An insulating block made of doped silicon oxide covers the conductive pad portions.
  • The insulating block has a flat second surface parallel to the substrate.
  • The dopant element in the insulating block can be a metalloid or non-metal element with an atomic weight between 5 and 15.
  • Plug structures pass through the insulating block in a vertical direction.

Potential Applications

  • This semiconductor device can be used in various electronic devices such as computers, smartphones, and tablets.
  • It can be applied in integrated circuits, microprocessors, and memory devices.

Problems Solved

  • The insulating block with a flat second surface helps in achieving better electrical insulation and stability.
  • The use of doped silicon oxide enhances the performance and reliability of the semiconductor device.
  • The plug structures passing through the insulating block provide efficient vertical connections.

Benefits

  • The stepped connection portion allows for multiple conductive pad portions, enabling complex circuit designs.
  • The insulating block with a flat second surface improves the overall electrical insulation and stability of the device.
  • The use of doped silicon oxide enhances the performance and reliability of the semiconductor device.
  • The plug structures passing through the insulating block provide efficient vertical connections, improving the device's functionality.


Original Abstract Submitted

A semiconductor device includes: a stepped connection portion having a plurality of conductive pad portions disposed on a substrate; an insulating block covering the plurality of conductive pad portions, wherein the insulating block has a first surface and a second surface, wherein the first surface faces the stepped connection portion, wherein the second surface is flat and extends in a direction parallel to a first surface of the substrate, wherein the insulating block includes a silicon oxide film doped with a dopant element including a metalloid element or a non-metal element, wherein the dopant element has an atomic weight within a range of 5 to 15; and at least one plug structure passing through the insulating block in a vertical direction with respect to the first surface of substrate.

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