17834940. SEMICONDUCTOR DEVICE WITH COMPOSITE CONTACT STRUCTURE simplified abstract (NANYA TECHNOLOGY CORPORATION)
SEMICONDUCTOR DEVICE WITH COMPOSITE CONTACT STRUCTURE
Organization Name
Inventor(s)
YU-CHANG Chang of TAOYUAN CITY (TW)
PO-HUNG Chen of TAOYUAN CITY (TW)
SEMICONDUCTOR DEVICE WITH COMPOSITE CONTACT STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17834940 titled 'SEMICONDUCTOR DEVICE WITH COMPOSITE CONTACT STRUCTURE
Simplified Explanation
The present patent application describes a semiconductor device and a method for fabricating it. The device includes a substrate, a first dielectric layer, a first conductive structure, a first conductive layer, and an adhesive layer.
- The semiconductor device includes a substrate, which serves as the foundation for the device.
- A first dielectric layer is positioned on the substrate, providing insulation.
- A first conductive structure is positioned in the first dielectric layer and has a bottle-shaped cross-sectional profile, allowing for specific electrical properties.
- A first conductive layer is located between the first conductive structure and the first dielectric layer, as well as between the first conductive structure and the substrate, providing electrical conductivity.
- An adhesive layer is positioned between the first conductive layer and the first dielectric layer, as well as between the first conductive layer and the substrate, ensuring stability and adhesion.
The combination of the adhesive layer, first conductive layer, and first conductive structure creates a composite contact structure with an aspect ratio greater than 7.
Potential Applications
This technology has potential applications in various fields, including:
- Semiconductor manufacturing industry
- Electronics industry
- Integrated circuit design and fabrication
Problems Solved
The disclosed semiconductor device and fabrication method address several challenges, such as:
- Ensuring proper electrical conductivity and insulation in a semiconductor device
- Achieving a specific cross-sectional profile for improved electrical properties
- Enhancing stability and adhesion between different layers in the device
Benefits
The described technology offers several benefits, including:
- Improved electrical performance due to the specific cross-sectional profile of the conductive structure
- Enhanced stability and adhesion provided by the adhesive layer
- Increased aspect ratio of the composite contact structure, allowing for more efficient electrical connections.
Original Abstract Submitted
The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a first dielectric layer positioned on the substrate; a first conductive structure positioned in the first dielectric layer and including a bottle-shaped cross-sectional profile; a first conductive layer positioned between the first conductive structure and the first dielectric layer and between the first conductive structure and the substrate; an adhesive layer positioned between the first conductive layer and the first dielectric layer and between the first conductive layer and the substrate. The adhesive layer, the first conductive layer, and the first conductive structure together configure a composite contact structure. An aspect ratio of the composite contact structure is greater than 7.
