17834939. FERROELECTRIC TUNNEL JUNCTIONS WITH CONDUCTIVE ELECTRODES HAVING ASYMMETRIC NITROGEN OR OXYGEN PROFILES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
FERROELECTRIC TUNNEL JUNCTIONS WITH CONDUCTIVE ELECTRODES HAVING ASYMMETRIC NITROGEN OR OXYGEN PROFILES
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Kuo-Ching Huang of Hsinchu (TW)
FERROELECTRIC TUNNEL JUNCTIONS WITH CONDUCTIVE ELECTRODES HAVING ASYMMETRIC NITROGEN OR OXYGEN PROFILES - A simplified explanation of the abstract
This abstract first appeared for US patent application 17834939 titled 'FERROELECTRIC TUNNEL JUNCTIONS WITH CONDUCTIVE ELECTRODES HAVING ASYMMETRIC NITROGEN OR OXYGEN PROFILES
Simplified Explanation
The patent application describes a semiconductor device that includes a ferroelectric tunnel junction (FTJ). The FTJ consists of a first electrode, a ferroelectric layer, and a second electrode. The first electrode contains nitrogen or oxygen and has a certain percentage of nitrogen or oxygen, while the second electrode also contains nitrogen or oxygen but has a different percentage.
- The semiconductor device includes a ferroelectric tunnel junction (FTJ).
- The FTJ consists of a first electrode, a ferroelectric layer, and a second electrode.
- The first electrode contains nitrogen or oxygen and has a specific percentage of nitrogen or oxygen.
- The second electrode contains nitrogen or oxygen and has a different percentage of nitrogen or oxygen.
Potential applications of this technology:
- Memory devices: The ferroelectric tunnel junction can be used in non-volatile memory devices, such as FeRAM (ferroelectric random-access memory), due to its ability to retain information even when power is turned off.
- Logic devices: The semiconductor device can be utilized in logic circuits, enabling low-power and high-speed operations.
- Sensor devices: The ferroelectric tunnel junction can be employed in sensor devices for various applications, such as pressure sensors or temperature sensors.
Problems solved by this technology:
- Non-volatility: The ferroelectric tunnel junction provides a solution for developing non-volatile memory devices that can retain data without the need for continuous power supply.
- Low-power operation: The semiconductor device allows for low-power operation, reducing energy consumption and extending battery life in portable devices.
- High-speed operation: The technology enables high-speed operation in logic circuits, improving overall device performance.
Benefits of this technology:
- Improved memory performance: The ferroelectric tunnel junction offers enhanced memory performance, including faster read and write operations, high endurance, and low power consumption.
- Versatile applications: The semiconductor device can be utilized in various applications, including memory devices, logic circuits, and sensor devices, providing flexibility and adaptability.
- Compatibility: The technology can be integrated into existing semiconductor manufacturing processes, making it compatible with current fabrication techniques.
Original Abstract Submitted
A semiconductor device includes a ferroelectric tunnel junction (FTJ), wherein the ferroelectric tunnel junction includes a first electrode, a ferroelectric layer disposed over the first electrode, and a second electrode disposed over the ferroelectric layer. The first electrode contains nitrogen or oxygen and is characterized by a first percentage of nitrogen or oxygen. The second electrode contains nitrogen or oxygen and is characterized by a second percentage of nitrogen or oxygen. The first percentage is different from the second percentage.
