17834694. SEMICONDUCTOR DEVICE WITH FLEXIBLE SHEET STRUCTURE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

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SEMICONDUCTOR DEVICE WITH FLEXIBLE SHEET STRUCTURE

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Chun-Yen Lin of Hsinchu City (TW)

SEMICONDUCTOR DEVICE WITH FLEXIBLE SHEET STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17834694 titled 'SEMICONDUCTOR DEVICE WITH FLEXIBLE SHEET STRUCTURE

Simplified Explanation

The patent application describes a method for manufacturing semiconductor structures. Here are the key points:

  • The method involves patterning a substrate to create a fin-like structure that protrudes from the substrate.
  • A dummy gate structure is formed across the fin-like structure.
  • The fin-like structure is recessed using the dummy gate structure as an etch mask, creating recesses on both sides of the dummy gate structure.
  • Epitaxial features are grown in the recesses.
  • The dummy gate structure is then replaced with a metal gate structure.
  • The fin-like structure has two portions, with the second portion being narrower than the first portion.
  • The metal gate structure engages both portions of the fin-like structure.

Potential applications of this technology:

  • This manufacturing method can be used in the production of semiconductor devices, such as transistors.
  • It can improve the performance and efficiency of these devices by allowing for better control of the electrical properties.

Problems solved by this technology:

  • The method provides a way to create fin-like structures with different widths, allowing for more precise control over the device characteristics.
  • It enables the growth of epitaxial features in recesses, which can enhance the performance of the semiconductor structures.

Benefits of this technology:

  • The method allows for the fabrication of semiconductor structures with improved electrical properties.
  • It provides a more efficient and precise way to manufacture semiconductor devices.
  • The use of metal gate structures can enhance the performance and reliability of the devices.


Original Abstract Submitted

Semiconductor structures and the manufacturing method thereof are disclosed. An exemplary manufacturing method includes patterning a top portion of a substrate, thereby forming a fin-like structure protruding from the substrate, forming a dummy gate structure across the fin-like structure, the dummy gate structure being directly above the first portion and the second portion of the fin-like structure, recessing the fin-like structure with the dummy gate structure as an etch mask, thereby forming recesses on both sides of the dummy gate structure, growing epitaxial features in the recesses, and replacing the dummy gate structure with a metal gate structure. The fin-like structure has a first portion with a first width and a second portion with a second width that is smaller than the first width. The metal gate structure engages both the first portion and the second portion of the fin-like structure.

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