17828339. SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME
Organization Name
Inventor(s)
Donghoon Kwon of Hwaseong-si (KR)
Chungki Min of Hwaseong-si (KR)
Kihoon Jang of Hwaseong-si (KR)
SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17828339 titled 'SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME
Simplified Explanation
The patent application describes a semiconductor device that includes multiple substrates and a stack structure with gate layers and interlayer insulating layers. The device also includes a capping insulating layer, an upper insulating layer, a peripheral contact structure, a memory vertical structure, a support vertical structure, and a gate contact plug.
- The stack structure includes gate pads with a step shape in one region of the second substrate.
- The capping insulating layer partially covers the stack structure.
- The upper insulating layer is located on top of the stack structure and the capping insulating layer.
- The peripheral contact structure consists of through-vias that contact the second substrate and are spaced apart from the gate layers.
- The peripheral contact pattern connects some of the through-vias to each other.
- The memory vertical structure and support vertical structure are additional components of the device.
- The gate contact plug is used to establish electrical connections with the gate pads.
Potential Applications
- This semiconductor device can be used in various electronic devices such as smartphones, tablets, and computers.
- It can also be applied in automotive electronics, medical devices, and industrial equipment.
Problems Solved
- The device solves the problem of integrating multiple substrates and stack structures in a semiconductor device.
- It addresses the challenge of establishing electrical connections with gate pads in a reliable and efficient manner.
Benefits
- The device provides a compact and efficient design for semiconductor devices.
- It enables improved performance and functionality in electronic devices.
- The technology offers enhanced reliability and connectivity in gate pad connections.
Original Abstract Submitted
A semiconductor device includes: a first substrate; a second substrate including first and second regions; a stack structure in the first region and extending from the first region into the second region, the stack structure including interlayer insulating layers and gate layers, wherein the gate layers include gate pads having a step shape in the second region; a capping insulating layer at least partially covering the stack structure; an upper insulating layer on the stack structure and the capping insulating layer; a peripheral contact structure including a plurality of through-vias contacting the second substrate and spaced apart from the gate layers, and a peripheral contact pattern on the plurality of through-vias and connecting at least a portion of the plurality of through-vias to each other; a memory vertical structure; a support vertical structure; and a gate contact plug on the gate pads to be electrically connected to the gate pads.
