17828298. SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
Organization Name
Inventor(s)
Kiseok Lee of Hwaseong-si (KR)
Hui-Jung Kim of Seongnam-si (KR)
Yoosang Hwang of Yongin-si (KR)
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17828298 titled 'SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
Simplified Explanation
The patent application describes a semiconductor memory device with a stack structure that includes layer groups vertically stacked on a substrate. The device also includes a word line, a channel layer, and a data storage element connected to the channel layer. Additionally, there is a vertically extending bit line on one side of the stack structure.
- The word line of each layer group extends parallel to the top surface of the substrate.
- The layer groups consist of first and second layer groups that are stacked one after the other.
- The channel layer is positioned below the word line of the first layer group and above the word line of the second layer group.
- The bit line has a first protrusion portion connected to the channel layer of the first layer group and a second protrusion portion connected to the channel layer of the second layer group.
Potential Applications
- This semiconductor memory device can be used in various electronic devices such as smartphones, tablets, computers, and servers.
- It can be utilized in data storage systems, providing fast and efficient memory access.
Problems Solved
- The stack structure and the arrangement of layer groups allow for a compact and efficient memory device design.
- The connection of the bit line to the channel layers of each layer group enables improved data transfer and storage capabilities.
Benefits
- The vertical stacking of layer groups saves space and allows for higher memory density.
- The parallel extension of word lines simplifies the design and manufacturing process.
- The connection of the bit line to each layer group's channel layer enhances data transmission speed and reliability.
Original Abstract Submitted
A semiconductor memory device including a stack structure including layer groups that are vertically stacked on a substrate and including a word line, a channel layer, and a data storage element that is electrically connected to the channel layer; and a vertically extending bit line on one side of the stack structure, wherein the word line of each of the layer groups extends in a first direction parallel to a top surface of the substrate, the layer groups include first and second layer groups that are sequentially stacked, the channel layer is below the word line of the first layer group, the channel layer is above the word line of the second layer group, and the bit line includes a first protrusion portion connected to the channel layer of the first layer group; and a second protrusion portion connected to the channel layer of the second layer group.
