17825441. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Teawon Kim of Hwaseong-si (KR)
Kong-Soo Lee of Hwaseong-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17825441 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The patent application describes a semiconductor device that includes a substrate, a conductive line, an isolation insulating layer, a crystalline oxide semiconductor layer, and a gate electrode.
- The device has a substrate and a conductive line on the substrate.
- An isolation insulating layer extends on the substrate and the conductive line, defining a channel trench.
- The channel trench extends from the upper surface to the lower surface of the isolation insulating layer.
- A crystalline oxide semiconductor layer is formed along the inner side and bottom surfaces of the channel trench, making contact with the conductive line.
- A gate electrode is placed on the crystalline oxide semiconductor layer inside the channel trench.
Potential applications of this technology:
- This semiconductor device can be used in various electronic devices, such as smartphones, tablets, and computers.
- It can be utilized in the manufacturing of high-performance integrated circuits.
Problems solved by this technology:
- The device addresses the need for improved semiconductor devices with enhanced performance and functionality.
- It solves the problem of achieving better conductivity and control of electrical signals.
Benefits of this technology:
- The device offers improved performance and functionality compared to traditional semiconductor devices.
- It provides better conductivity and control of electrical signals, leading to enhanced overall device performance.
- The use of a crystalline oxide semiconductor layer improves the reliability and stability of the device.
Original Abstract Submitted
A semiconductor device includes: a substrate; a conductive line extending on the substrate in a first horizontal direction; an isolation insulating layer extending on the substrate and the conductive line in a second horizontal direction intersecting with the first horizontal direction, and defining a channel trench extending through the isolation insulating layer from an upper surface of the isolation insulating layer to a lower surface of the isolation insulating layer; a crystalline oxide semiconductor layer extending along at least a portion of an inner side surface of the channel trench and at least a portion of a bottom surface of the channel trench and coming in contact with the conductive line; and a gate electrode extending on the crystalline oxide semiconductor layer inside the channel trench in the second horizontal direction.
