17823411. NANOFABRICATION METHOD WITH CORRECTION OF DISTORTION WITHIN AN IMPRINT SYSTEM simplified abstract (CANON KABUSHIKI KAISHA)
NANOFABRICATION METHOD WITH CORRECTION OF DISTORTION WITHIN AN IMPRINT SYSTEM
Organization Name
Inventor(s)
Anshuman Cherala of Austin TX (US)
NANOFABRICATION METHOD WITH CORRECTION OF DISTORTION WITHIN AN IMPRINT SYSTEM - A simplified explanation of the abstract
This abstract first appeared for US patent application 17823411 titled 'NANOFABRICATION METHOD WITH CORRECTION OF DISTORTION WITHIN AN IMPRINT SYSTEM
Simplified Explanation
The nanofabrication method described in the patent application involves receiving information about in-plane distortion of a substrate, modeling out-of-plane displacement using a combination of geometric modes, generating drop patterns of formable material based on the modeled displacement, dispensing drops onto the substrate according to the patterns, and contacting the drops with a template to form a film. Correction coefficients are used to modify the geometric modes based on analytically and empirically determined amounts of in-plane distortion.
- The method involves receiving information about substrate distortion and using it to model out-of-plane displacement.
- Drop patterns of formable material are generated based on the modeled displacement.
- Correction coefficients are used to modify the geometric modes to account for in-plane distortion.
- Drops of formable material are dispensed onto the substrate according to the patterns.
- The dispensed drops are contacted with a template to form a film.
Potential applications of this technology:
- Nanofabrication of electronic devices
- Manufacturing of microfluidic devices
- Production of sensors and actuators
Problems solved by this technology:
- Improving accuracy in nanofabrication processes
- Addressing in-plane distortion issues in substrate materials
Benefits of this technology:
- Enhanced precision in creating nanostructures
- Increased efficiency in nanofabrication processes
- Ability to produce complex patterns with reduced distortion.
Original Abstract Submitted
A nanofabrication method comprises receiving information regarding in-plane distortion of a substrate, modeling target out-of-plane displacement as a summation of a plurality of geometric modes represented by a linear combination of basis functions, generating a first drop pattern of formable material based on the modeled out-of-plane displacement, generating a second drop pattern by merging the first drop pattern with a drop pattern based on a topography of the template and the substrate; dispensing drops of formable material onto the substrate according to the second drop pattern, and contacting the dispensed drops with the template to form a film. The plurality of geometric modes are modified using a plurality of unique predetermined correction coefficients. Each unique predetermined correction coefficient represents a relationship between an analytically determined amount of in-plane distortion and an empirically determined amount of in-plane distortion.
