17822867. Polishing Pad for Chemical Mechanical Polishing and Method simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

From WikiPatents
Jump to navigation Jump to search

Polishing Pad for Chemical Mechanical Polishing and Method

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Te-Chien Hou of Kaohsiung City (TW)

Chih Hung Chen of Hsinchu (TW)

Liang-Che Chen of Hsinchu (TW)

Shich-Chang Suen of Hsinchu (TW)

Liang-Guang Chen of Hsinchu (TW)

Polishing Pad for Chemical Mechanical Polishing and Method - A simplified explanation of the abstract

This abstract first appeared for US patent application 17822867 titled 'Polishing Pad for Chemical Mechanical Polishing and Method

Simplified Explanation

The abstract describes a patent application for polishing pads with varying protrusions and methods of making them. The polishing pad includes a substrate, a first protrusion with a central region and a peripheral region, and a first groove adjacent to the first side of the first protrusion.

  • The patent application is for polishing pads with varying protrusions.
  • The polishing pad includes a substrate, which serves as the base for the pad.
  • The pad has a first protrusion with a central region and a peripheral region.
  • The central region of the protrusion has a higher hardness than the peripheral region.
  • The pad also has a first groove adjacent to one side of the first protrusion.

Potential applications of this technology:

  • Polishing and finishing surfaces in various industries such as automotive, electronics, and optics.
  • Removing scratches, imperfections, or blemishes from surfaces.
  • Achieving a smooth and polished finish on different materials like metal, glass, or plastic.

Problems solved by this technology:

  • Uneven polishing or finishing of surfaces due to the uniform hardness of traditional polishing pads.
  • Inefficient removal of scratches or imperfections on surfaces.
  • Lack of control over the polishing process, resulting in inconsistent results.

Benefits of this technology:

  • Improved polishing efficiency and effectiveness.
  • Enhanced control over the polishing process for achieving desired results.
  • Reduced time and effort required for surface polishing.
  • Consistent and uniform finish on various materials.


Original Abstract Submitted

Polishing pads having varying protrusions and methods of forming the same are disclosed. In an embodiment, a polishing pad includes a polishing pad substrate; a first protrusion on the polishing pad substrate, the first protrusion including a central region and a peripheral region surrounding the central region, and a first hardness of the central region being greater than a second hardness of the peripheral region; and a first groove adjacent a first side of the first protrusion.

Retrieved from "http://wikipatents.org/index.php?title=17822867._Polishing_Pad_for_Chemical_Mechanical_Polishing_and_Method_simplified_abstract_(Taiwan_Semiconductor_Manufacturing_Co.,_Ltd.)&oldid=16125"