17822476. SEMICONDUCTOR PACKAGE AND METHOD simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

SEMICONDUCTOR PACKAGE AND METHOD

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Jian-You Chen of Hsinchu (TW)

Kuan-Yu Huang of Taipei (TW)

Li-Chung Kuo of Taipei City (TW)

Chen-Hsuan Tsai of Taitung City (TW)

Kung-Chen Yeh of Taichung City (TW)

Hsien-Ju Tsou of Taipei (TW)

Ying-Ching Shih of Hsinchu (TW)

Szu-Wei Lu of Hsinchu (TW)

SEMICONDUCTOR PACKAGE AND METHOD - A simplified explanation of the abstract

This abstract first appeared for US patent application 17822476 titled 'SEMICONDUCTOR PACKAGE AND METHOD

Simplified Explanation

The semiconductor package includes dam structures and a method of forming them.

• Semiconductor package consists of an interposer, a semiconductor die, an encapsulant, a substrate, and an underfill.
• Dam structures are located on the substrate adjacent to the corners of the interposer.
• Dam structures are in direct contact with the underfill.
• The coefficient of thermal expansion of the dam structures is smaller than that of the underfill.

Potential Applications

• Semiconductor packaging industry
• Electronics manufacturing

Problems Solved

• Reducing thermal expansion mismatch between components
• Preventing damage to the semiconductor package during temperature changes

Benefits

• Improved reliability of semiconductor packages
• Enhanced performance of electronic devices
• Increased lifespan of electronic components

Original Abstract Submitted

A semiconductor package including one or more dam structures and the method of forming are provided. A semiconductor package may include an interposer, a semiconductor die bonded to a first side of the interposer, an encapsulant on the first side of the interposer encircling the semiconductor die, a substrate bonded to the a second side of the interposer, an underfill between the interposer and the substrate, and one or more of dam structures on the substrate. The one or more dam structures may be disposed adjacent respective corners of the interposer and may be in direct contact with the underfill. The coefficient of thermal expansion of the one or more of dam structures may be smaller than the coefficient of thermal expansion of the underfill.