17821004. METHOD FOR OBTAINING AN EXPOSURE DATA AND METHOD FOR MANUFACTURING AN EXPOSURE MASK USING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
METHOD FOR OBTAINING AN EXPOSURE DATA AND METHOD FOR MANUFACTURING AN EXPOSURE MASK USING THE SAME
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METHOD FOR OBTAINING AN EXPOSURE DATA AND METHOD FOR MANUFACTURING AN EXPOSURE MASK USING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17821004 titled 'METHOD FOR OBTAINING AN EXPOSURE DATA AND METHOD FOR MANUFACTURING AN EXPOSURE MASK USING THE SAME
Simplified Explanation
The patent application describes a method for obtaining exposure data for a mask pattern. Here are the key points:
- The method involves receiving Mask Tape Out (MTO) design data for a mask pattern.
- A mask data preparation operation is performed on the MTO design data to obtain exposure data.
- Two-dimensional contours of different test patterns in an exposure mask are extracted through simulation using a mask process model.
- First critical dimensions are measured at measurement points on the contour of each test pattern using a metrology algorithm.
- The first critical dimensions are averaged to obtain a first average critical dimension for each test pattern.
- Second critical dimensions, considering dispersion in each test pattern, are measured using an inverse function of a standard normal distribution.
- The second critical dimensions are averaged to obtain a second average critical dimension for each test pattern.
- A mean to target (MTT) value is calculated as the difference between the second average critical dimension and a target critical dimension for each test pattern.
- Differences between the MTT values are calculated.
- If any of the differences between the MTT values are outside of a tolerance threshold, the exposure data is corrected.
Potential applications of this technology:
- Semiconductor manufacturing: This method can be used in the production of semiconductor devices to ensure accurate exposure of the mask pattern, leading to improved device performance and yield.
Problems solved by this technology:
- Variation in critical dimensions: The method addresses the issue of variations in critical dimensions of test patterns in an exposure mask, which can affect the quality and performance of semiconductor devices.
Benefits of this technology:
- Improved accuracy: By measuring and averaging critical dimensions of test patterns, the method provides a more accurate representation of the mask pattern, leading to better control over the manufacturing process.
- Increased yield: Correcting exposure data based on the calculated MTT values helps to minimize variations and improve yield in semiconductor manufacturing.
Original Abstract Submitted
A method for obtaining exposure data may be provided. MTO (Mask Tape Out) design data for a mask pattern may be received. A mask data preparation operation with respect to the MTO design data may be performed to obtain exposure data. Two-dimensional contours of a plurality of types of test patterns in an exposure mask may be extracted through simulation using a mask process model. First critical dimensions may be measured at measurement points of the contour of each of the plurality of types of test patterns by using a metrology algorithm. The first critical dimensions may be averaged to obtain a first average critical dimension for each of the plurality of types of test patterns. Second critical dimensions in consideration of dispersion in each of the plurality of types of test patterns may be measured using an inverse function of a standard normal distribution, and the second critical dimensions may be averaged to obtain a second average critical dimension for each of the plurality of types of test patterns. A mean to target (MTT) value may be calculated as a difference between the second average critical dimension and a target critical dimension for each of the plurality of types of test patterns. Differences between ones of the MTT values may be calculated. When one or more of the differences between the ones of the MTT values may is outside of a tolerance threshold, the exposure data may be corrected.
