17819936. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Choongsun Kim of Suwon-si (KR)
Shigenobu Maeda of Seongnam-si (KR)
Myoungkyu Park of Yongin-si (KR)
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17819936 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE
Simplified Explanation
The patent application describes a semiconductor device that includes an active fin protruding from a substrate, with gate structures intersecting the fin. Epitaxial layers are placed on opposite sides of the gate structure, providing drain and source regions. The gate spacers include two regions, one extending along the side surface of the gate and another extending away from the gate.
- The semiconductor device includes an active fin protruding from a substrate.
- Gate structures intersect the active fin and extend in a different direction.
- Epitaxial layers are placed on opposite sides of the gate structure.
- The epitaxial layers provide drain and source regions.
- The gate spacers include two regions, one along the side surface of the gate and another extending away from the gate.
Potential Applications
- This semiconductor device can be used in various electronic devices such as smartphones, tablets, and computers.
- It can be utilized in power management circuits, memory devices, and microprocessors.
Problems Solved
- The active fin and gate structure allow for better control and manipulation of electrical currents.
- The epitaxial layers provide efficient drain and source regions, improving the overall performance of the semiconductor device.
- The gate spacers help in reducing leakage currents and enhancing the device's reliability.
Benefits
- The semiconductor device offers improved performance and efficiency.
- It allows for better integration of components, leading to smaller and more compact electronic devices.
- The device's reliability is enhanced due to reduced leakage currents and improved control of electrical currents.
Original Abstract Submitted
A semiconductor device includes an active fin protruding from a substrate, extending in a first direction, and defined by a device isolation layer. Gate structures intersect the active fin and extend in a second direction. Each of the gate structures includes a gate and gate spacers on side surfaces of the gate. Epitaxial layers are disposed on the active fin, on opposite sides of the gate structure, and include a first epitaxial layer providing a drain region and a second epitaxial layer providing a source region. The gate spacers include a first spacer disposed between the first epitaxial layer and the gate. The first spacer includes a first region extending in a third direction, along a side surface of the gate, and a second region extending from a lower portion of the first region in a direction away from the gate.
