17819330. SEMICONDUCTOR MEMORY DEVICES, ELECTRONIC SYSTEMS INCLUDING THE SAME AND FABRICATING METHODS OF THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
SEMICONDUCTOR MEMORY DEVICES, ELECTRONIC SYSTEMS INCLUDING THE SAME AND FABRICATING METHODS OF THE SAME
Organization Name
Inventor(s)
JIN YOUNG Park of Suwon-si (KR)
YEON GEUN Yook of Seongnam-si (KR)
YOUNG SIK Lee of Suwon-si (KR)
SEMICONDUCTOR MEMORY DEVICES, ELECTRONIC SYSTEMS INCLUDING THE SAME AND FABRICATING METHODS OF THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17819330 titled 'SEMICONDUCTOR MEMORY DEVICES, ELECTRONIC SYSTEMS INCLUDING THE SAME AND FABRICATING METHODS OF THE SAME
Simplified Explanation
The patent application describes semiconductor memory devices that have a unique structure to improve their performance and efficiency. Here are the key points:
- The memory device includes a cell substrate with different regions, including a cell array region, first and second extension regions, and a through region.
- The device has a mold structure that includes stacked gate electrodes, which are responsible for controlling the flow of electric current.
- There are two interlayer insulating layers, one extending conformally on the gate electrodes in the second extension region and another on top of the first insulating layer.
- Another mold structure includes additional gate electrodes stacked on the first extension region.
- The device also has a channel structure in the mold structures on the cell array region, which helps in storing and retrieving data.
- There are cell contact structures in both mold structures, allowing for efficient communication between the memory cells and other components.
- The first and second interlayer insulating layers have different impurity concentrations, which can enhance the performance of the memory device.
Potential applications of this technology:
- Semiconductor memory devices are widely used in various electronic devices, such as computers, smartphones, and tablets.
- The improved structure described in the patent application can enhance the performance and efficiency of these memory devices, making them more suitable for high-speed data processing and storage applications.
Problems solved by this technology:
- The unique structure of the memory device helps address challenges related to performance and efficiency.
- By having different impurity concentrations in the interlayer insulating layers, the device can achieve better performance and reliability.
Benefits of this technology:
- The improved structure can lead to faster data processing and storage capabilities in semiconductor memory devices.
- The different impurity concentrations in the interlayer insulating layers can enhance the reliability and durability of the memory device.
- Overall, this technology can contribute to the development of more efficient and high-performance electronic devices.
Original Abstract Submitted
Semiconductor memory devices may include a cell substrate including a cell array region, first and second extension regions and a through region, a first mold structure including first gate electrodes stacked in a stepwise manner, a first interlayer insulating layer extending conformally on the first gate electrodes on the second extension region, a second interlayer insulating layer on the first interlayer insulating layer, a second mold structure including second gate electrodes on the second interlayer insulating layer and stacked on the first extension region in the stepwise manner, a channel structure in the first and second mold structures on the cell array region, a first cell contact structure in the first mold structure on the second extension region, and a second cell contact structure in the first and second mold structures on the first extension region. The first and second interlayer insulating layers may have different impurity concentrations.
