17819244. FERROELECTRIC TUNNEL JUNCTION (FTJ) STRUCTURES simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
Contents
FERROELECTRIC TUNNEL JUNCTION (FTJ) STRUCTURES
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Kuo-Ching Huang of Hsinchu (TW)
FERROELECTRIC TUNNEL JUNCTION (FTJ) STRUCTURES - A simplified explanation of the abstract
This abstract first appeared for US patent application 17819244 titled 'FERROELECTRIC TUNNEL JUNCTION (FTJ) STRUCTURES
Simplified Explanation
Provided are ferroelectric tunnel junction (FTJ) structures, memory devices, and methods for fabricating such structures and devices. An FTJ structure includes a first electrode, a ferroelectric material layer, and a catalytic metal layer in contact with the ferroelectric material layer.
- FTJ structures for memory devices
- Consist of first electrode, ferroelectric material layer, and catalytic metal layer
- Methods for fabricating FTJ structures
- Catalytic metal layer in contact with ferroelectric material layer
Potential Applications
- Non-volatile memory devices
- High-density data storage
- Neuromorphic computing
Problems Solved
- Improving memory device performance
- Enhancing data retention capabilities
- Increasing memory device efficiency
Benefits
- Faster data access speeds
- Lower power consumption
- Extended device lifespan
Original Abstract Submitted
Provided are ferroelectric tunnel junction (FTJ) structures, memory devices, and methods for fabricating such structures and devices. An FTJ structure includes a first electrode, a ferroelectric material layer, and a catalytic metal layer in contact with the ferroelectric material layer.
