17817441. MAGNETIC MEMORY DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
MAGNETIC MEMORY DEVICES
Organization Name
Inventor(s)
Joonmyoung Lee of Gwacheon-si (KR)
Jeong-Heon Park of Hwaseong-si (KR)
MAGNETIC MEMORY DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 17817441 titled 'MAGNETIC MEMORY DEVICES
Simplified Explanation
The abstract describes a magnetic memory device that consists of multiple layers stacked on a substrate. These layers include magnetic patterns, a tunnel barrier pattern, a lower electrode, a blocking pattern, a metal oxide pattern, and a buffer pattern. The lower electrode, blocking pattern, metal oxide pattern, and buffer pattern are made of different non-magnetic metals. The metal oxide pattern is in an amorphous phase.
- The magnetic memory device includes multiple layers stacked on a substrate.
- The layers include magnetic patterns, a tunnel barrier pattern, a lower electrode, a blocking pattern, a metal oxide pattern, and a buffer pattern.
- The lower electrode, blocking pattern, metal oxide pattern, and buffer pattern are made of different non-magnetic metals.
- The metal oxide pattern is in an amorphous phase.
Potential Applications
- Magnetic storage devices
- Data storage in computers and electronic devices
- Magnetic sensors
Problems Solved
- Improved magnetic memory device design
- Enhanced data storage capabilities
- Increased efficiency and reliability of magnetic storage
Benefits
- Higher data storage density
- Faster data access and retrieval
- Improved durability and longevity of magnetic memory devices
Original Abstract Submitted
A magnetic memory device includes a first magnetic pattern and a second magnetic pattern that are sequentially stacked on a substrate, a tunnel barrier pattern between the first magnetic pattern and the second magnetic pattern, a lower electrode between the substrate and the first magnetic pattern, a blocking pattern between the lower electrode and the first magnetic pattern, a metal oxide pattern between the blocking pattern and the first magnetic pattern, and a buffer pattern between the metal oxide pattern and the first magnetic pattern. The lower electrode, the blocking pattern, the metal oxide pattern, and the buffer pattern include first, second, third, and fourth non-magnetic metals, respectively. The metal oxide pattern has an amorphous phase.
