17816257. SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

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SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Y.W. Huang of Tainan City (TW)

Chen-Hsien Lin of Tainan City (TW)

U-Ting Chen of Wanluan Township (TW)

Shu-Ting Tsai of Kaohsiung City (TW)

Tzu-Hsuan Hsu of Kaohsiung City (TW)

SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING - A simplified explanation of the abstract

This abstract first appeared for US patent application 17816257 titled 'SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING

Simplified Explanation

The patent application describes techniques for improving the performance of a backside illumination image sensor by forming a biased backside deep trench isolation and grid structure. The techniques involve creating an array of backside deep trench isolation structures and a biasing-pad that connects to the array through the grid structure. This configuration helps reduce electrical cross-talk and oblique light cross-talk between the photodiodes of the image sensor, leading to improved performance.

  • The patent application proposes forming an array of backside deep trench isolation structures and a biasing-pad that connects to the array through a grid structure.
  • This configuration aims to reduce electrical cross-talk and oblique light cross-talk between the photodiodes of the backside illumination image sensor.
  • The techniques may help improve the performance of the image sensor by suppressing dark current, reducing the number of white pixels, and minimizing cross-talk within the sensor.

Potential Applications

  • Backside illumination image sensors used in digital cameras, smartphones, and other imaging devices.
  • Image sensors used in medical imaging equipment, surveillance cameras, and automotive cameras.

Problems Solved

  • Electrical cross-talk between photodiodes in a backside illumination image sensor.
  • Oblique light cross-talk between photodiodes in a backside illumination image sensor.
  • Dark current within a backside illumination image sensor.
  • Presence of white pixels in the output of a backside illumination image sensor.
  • Cross-talk within a backside illumination image sensor.

Benefits

  • Improved performance and image quality of backside illumination image sensors.
  • Reduction in electrical and oblique light cross-talk, leading to clearer and more accurate images.
  • Suppression of dark current, resulting in better signal-to-noise ratio.
  • Decreased occurrence of white pixels in the output, enhancing image fidelity.
  • Minimized cross-talk within the image sensor, improving overall image resolution and clarity.


Original Abstract Submitted

Some implementations described herein provide for techniques to form a biased backside deep trench isolation and grid structure for a backside illumination image sensor. The techniques include forming an array of backside deep trench isolation structures and a biasing-pad that electrically connects to the array of metal-filled backside deep trench isolation structures through the grid structure. The array of backside deep trench isolation structures, the grid structure, and the biasing-pad structure may reduce a likelihood of electrical cross-talk and/or oblique light cross-talk between the photodiodes of the backside illumination image sensor. In this way, a performance of the backside illumination image sensor may be improved. Such improvements may include a suppression of a dark current within the backside illumination image sensor, a reduction in a number of white pixels, and a reduction in cross-talk within the backside illumination image sensor.

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