17815854. SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Sheng-Tsung Wang of Hsinchu (TW)
Min-Hsuan Lu of Hsinchu City (TW)
Chia-Hung Chu of Taipei City (TW)
Shuen-Shin Liang of Hsinchu County (TW)
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17815854 titled 'SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
Simplified Explanation
The abstract describes a method for forming a semiconductor device structure. Here is a simplified explanation of the abstract:
- Nanostructures are formed on the front side of a substrate.
- A gate structure is formed around the nanostructures.
- A source/drain structure is formed next to the gate structure.
- A trench is created through the substrate from the back side.
- A first silicide layer is formed, contacting the source/drain structure.
- A second silicide layer is formed over the first silicide layer and the trench sidewalls.
- A first conductive material is deposited over the second silicide layer.
- The first conductive material is etched back.
- The second silicide layer is etched back.
- A second conductive material is deposited in the trench.
Potential applications of this technology:
- Semiconductor device manufacturing
- Integrated circuits
- Transistors
- Memory devices
Problems solved by this technology:
- Improved performance and functionality of semiconductor devices
- Enhanced conductivity and electrical properties
- Efficient integration of nanostructures and gate structures
Benefits of this technology:
- Higher speed and efficiency of semiconductor devices
- Increased storage capacity and data processing capabilities
- Improved reliability and durability of devices
- Enhanced integration of different components in a compact structure
Original Abstract Submitted
A method for forming a semiconductor device structure includes forming nanostructures over a front side of a substrate. The method also includes forming a gate structure surrounding the nanostructures. The method also includes forming a source/drain structure beside the gate structure. The method also includes forming a trench though the substrate from a back side of the substrate. The method also includes forming a first silicide layer in contact with the source/drain structure. The method also includes forming a second silicide layer over the first silicide layer and the sidewalls of the trench. The method also includes depositing a first conductive material over the second silicide layer. The method also includes etching back the first conductive material. The method also includes etching back the second silicide layer. The method also includes depositing a second conductive material in the trench.
