17815602. IMAGE SENSOR AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
IMAGE SENSOR AND METHOD OF FABRICATING THE SAME
Organization Name
Inventor(s)
Yun Ki Lee of Hwaseong-si (KR)
Bumsuk Kim of Hwaseong-si (KR)
Yoongi Joung of Hwaseong-si (KR)
IMAGE SENSOR AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17815602 titled 'IMAGE SENSOR AND METHOD OF FABRICATING THE SAME
Simplified Explanation
The abstract describes a method of fabricating an image sensor using various steps such as forming a semiconductor substrate, creating pixel isolation trenches, doping the liner insulating layer, filling the trenches with a semiconductor layer, and performing a thermal treatment process.
- The method involves forming a semiconductor substrate of a specific conductivity type.
- Pixel isolation trenches are created in the semiconductor substrate to define pixel regions.
- A liner insulating layer is formed in the pixel isolation trenches.
- The liner insulating layer is doped with dopants of the same conductivity type as the semiconductor substrate.
- A semiconductor layer is formed on top of the liner insulating layer to fill the pixel isolation trenches.
- A thermal treatment process is performed on the semiconductor substrate.
Potential applications of this technology:
- Image sensors for digital cameras, smartphones, and other electronic devices.
- Surveillance cameras and security systems.
- Medical imaging devices such as X-ray machines and ultrasound scanners.
- Industrial inspection and quality control systems.
Problems solved by this technology:
- The method allows for the precise definition of pixel regions using pixel isolation trenches, improving the overall image quality and reducing cross-talk between pixels.
- The doping of the liner insulating layer helps in controlling the conductivity of the image sensor, enhancing its performance.
- The thermal treatment process ensures the stability and reliability of the fabricated image sensor.
Benefits of this technology:
- Improved image quality and resolution.
- Reduced noise and cross-talk between pixels.
- Enhanced sensitivity and responsiveness of the image sensor.
- Increased stability and reliability of the fabricated image sensor.
Original Abstract Submitted
A method of fabricating an image sensor includes forming a semiconductor substrate of a first conductivity type, forming a pixel isolation trench in in the semiconductor substrate to define pixel regions, forming a liner insulating layer in the pixel isolation trench, doping the liner insulating layer with dopants of a first conductivity type, forming a semiconductor layer on the liner insulating layer to fill the pixel isolation trench after the doping of the dopants, and performing a thermal treatment process on the semiconductor substrate.
