17815601. FERROELECTRIC TUNNEL JUNCTION DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
FERROELECTRIC TUNNEL JUNCTION DEVICE
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Kuo-Ching Huang of Hsinchu (TW)
FERROELECTRIC TUNNEL JUNCTION DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17815601 titled 'FERROELECTRIC TUNNEL JUNCTION DEVICE
Simplified Explanation
The abstract describes a memory device that includes a transistor device, a memory cell, and a heating structure. The memory cell is electrically coupled to a source or drain of the transistor device and includes an FJT (Ferroelectric Junction Transistor) structure. The memory cell is surrounded by a heating structure on multiple sides. The FJT structure consists of a first conductive electrode, a second conductive electrode, and a switching barrier. The conductive electrodes and the switching barrier have sidewalls that extend vertically to a certain elevation level. The switching barrier contains ferroelectric material that can be polarized to store information.
- The memory device includes a transistor device, a memory cell, and a heating structure.
- The memory cell is electrically connected to the transistor device and has an FJT structure.
- The FJT structure consists of a first conductive electrode, a second conductive electrode, and a switching barrier.
- The conductive electrodes and the switching barrier have vertical sidewalls terminating at a specific elevation level.
- The switching barrier contains ferroelectric material that can store information when polarized.
Potential Applications:
- Memory devices in electronic devices such as computers, smartphones, and tablets.
- Non-volatile memory for data storage in various industries including automotive, aerospace, and healthcare.
- High-speed memory for advanced computing systems and artificial intelligence applications.
Problems Solved:
- Provides a compact and efficient memory device with improved data storage capabilities.
- Enables non-volatile memory that retains information even when power is turned off.
- Offers high-speed memory access for faster data processing and retrieval.
Benefits:
- Increased memory density and storage capacity in a smaller footprint.
- Enhanced reliability and durability of memory cells.
- Faster data access and processing speeds.
- Lower power consumption compared to traditional memory technologies.
Original Abstract Submitted
A memory device includes a transistor device; a memory cell electrically coupled to a source or drain of the transistor device, wherein the memory cell includes an FJT structure; and a heating structure formed around the memory cell on a plurality of sides. The FJT structure includes a first conductive electrode having sidewalls that extend in a vertical direction to a first elevation level, a second conductive electrode having sidewalls that extend in the vertical direction to the first elevation level, and a switching barrier disposed between the first conductive electrode and the second conductive electrode and having sidewalls that extend in the vertical direction to the first elevation level, wherein the vertically extending sidewalls of the first conductive electrode, the second conductive electrode, and the switching barrier terminate at the first elevation level. The switching barrier includes ferroelectric (Fe) material that may be polarized to store information.
