17814003. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Jen-Yuan Chang of Hsinchu City (TW)
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17814003 titled 'SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
Simplified Explanation
The patent application describes a semiconductor structure that includes a substrate and multiple devices placed on the substrate. The structure also includes an interconnect structure that is electronically connected to the devices. A bonding film is formed over the interconnect structure, and a protective layer is formed on the sidewalls of the substrate, interconnect structure, and bonding film. Additionally, a dielectric material is formed on the sidewall of the protective layer, overlapping with the protective layer in a top view.
- The semiconductor structure includes a substrate and multiple devices.
- An interconnect structure is electronically connected to the devices.
- A bonding film is formed over the interconnect structure.
- A protective layer is formed on the sidewalls of the substrate, interconnect structure, and bonding film.
- A dielectric material is formed on the sidewall of the protective layer, overlapping with the protective layer in a top view.
Potential Applications
- Semiconductor manufacturing
- Electronics industry
- Integrated circuit production
Problems Solved
- Protection of the substrate, interconnect structure, and bonding film from external factors
- Enhanced durability and reliability of the semiconductor structure
Benefits
- Improved protection of the semiconductor structure
- Increased lifespan and performance of the devices
- Enhanced overall functionality and reliability of the semiconductor structure
Original Abstract Submitted
A semiconductor structure is provided, and includes a substrate and a plurality of devices disposed over the substrate. The semiconductor structure includes an interconnect structure disposed over the substrate and electronically connected to the devices. The semiconductor structure also includes a bonding film formed over the interconnect structure. The semiconductor structure further includes a protective layer formed on sidewalls of the substrate, the interconnect structure and the bonding film. In addition, the semiconductor structure includes a dielectric material formed on a sidewall of the protective layer and overlapping with the protective layer in a top view.
