SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING - A simplified explanation of the abstract

This abstract first appeared for US patent application 17809432 titled 'SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING

Simplified Explanation

The abstract describes a patent application that presents techniques and apparatuses for a stacked-die structure with different operating voltages for two integrated circuit devices. The first integrated circuit device includes a seal ring structure that eliminates the use of diodes and electrically isolates well structures, reducing leakage paths. The seal ring structure includes an interconnect structure that connects different layers of the first integrated circuit device, preventing moisture and cracking from penetrating the stacked-die structure.

The patent application describes a stacked-die structure with different operating voltages for two integrated circuit devices.
The first integrated circuit device includes a seal ring structure that eliminates the need for diodes.
The seal ring structure also electrically isolates well structures, reducing leakage paths.
An interconnect structure connects different layers of the first integrated circuit device, forming part of the seal ring structure.
The interconnect structure helps prevent moisture and cracking from penetrating the stacked-die structure.

Potential Applications

This technology can be applied in the manufacturing of stacked-die structures in various electronic devices, such as smartphones, tablets, and computers.
It can be used in integrated circuits that require different operating voltages for different components.

Problems Solved

The patent application addresses the issue of leakage paths in stacked-die structures by eliminating the use of diodes and electrically isolating well structures.
It also solves the problem of moisture and cracking penetrating the stacked-die structure by utilizing the interconnect structure as part of the seal ring structure.

Benefits

The elimination of diodes and the electrical isolation of well structures reduce leakage paths, improving the overall performance and reliability of the stacked-die structure.
The interconnect structure used in the seal ring structure helps prevent moisture and cracking, enhancing the durability and longevity of the stacked-die structure.

Original Abstract Submitted

Some implementations described herein provide techniques and apparatuses for a stacked-die structure including a first integrated circuit device over a second integrated circuit device, where an operating voltage of the first integrated circuit device is different relative to an operating voltage of the second integrated circuit device. The first integrated circuit device includes a first portion of a seal ring structure of the stacked-die structure. The first portion includes an interconnect structure that connects a backside redistribution layer of the first integrated circuit device with first metal layers of the first integrated circuit device. The seal ring structure including the interconnect structure eliminates the use of diodes and electrically isolates well structures of the first integrated circuit device to reduce leakage paths relative to a stacked-die structure having a seal ring structure including a diode within the stacked-die structure. Furthermore, use of the interconnect structure as part of the seal ring structure substantially eliminates moisture and/or cracking from penetrating the stacked-die structure.

17809432. SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

Contents

SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING

Organization Name

Inventor(s)