17809122. Photonic Package and Method of Manufacture simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
Photonic Package and Method of Manufacture
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Tsung-Fu Tsai of Changhua (TW)
Photonic Package and Method of Manufacture - A simplified explanation of the abstract
This abstract first appeared for US patent application 17809122 titled 'Photonic Package and Method of Manufacture
Simplified Explanation
The abstract describes a package that includes a laser diode and various layers and structures to facilitate its operation and connectivity.
- The package includes a bonding layer that directly bonds to the laser diode.
- A first dielectric layer is placed over the laser diode and is directly bonded to the bonding layer.
- A first silicon nitride waveguide is embedded in the first dielectric layer and extends over the laser diode.
- A second dielectric layer is placed over the first silicon nitride waveguide.
- A silicon waveguide is embedded in the second dielectric layer.
- An interconnect structure is placed over the silicon waveguide.
- Conductive features are present to electrically contact the interconnect structure through the first and second dielectric layers.
Potential applications of this technology:
- Optical communication systems
- Laser-based medical devices
- Optical sensing devices
- Data storage systems
Problems solved by this technology:
- Facilitates efficient and reliable electrical connectivity to the laser diode
- Provides a compact and integrated package for laser diode operation
- Ensures proper alignment and protection of the waveguides
Benefits of this technology:
- Improved performance and reliability of laser diodes
- Compact and integrated design for space-saving applications
- Enhanced electrical connectivity for efficient operation
- Protection and alignment of waveguides for optimal performance.
Original Abstract Submitted
A package includes a laser diode includes a bonding layer; a first dielectric layer over the laser diode, wherein the first dielectric layer is directly bonded to the bonding layer of the laser diode; a first silicon nitride waveguide in the first dielectric layer, wherein the first silicon nitride waveguide extends over the laser diode; a second dielectric layer over the first silicon nitride waveguide; a silicon waveguide in the second dielectric layer; an interconnect structure over the silicon waveguide; and conductive features extending through the first dielectric layer and the second dielectric layer to electrically contact the interconnect structure.
