17809025. METAL LAYER PROTECTION DURING WET ETCHING simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
METAL LAYER PROTECTION DURING WET ETCHING
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
METAL LAYER PROTECTION DURING WET ETCHING - A simplified explanation of the abstract
This abstract first appeared for US patent application 17809025 titled 'METAL LAYER PROTECTION DURING WET ETCHING
Simplified Explanation
The patent application describes a method of fabricating a contact in a semiconductor device. The method involves several steps, including forming a metal layer and a bottom anti-reflective coating (BARC) layer in an opening of a semiconductor structure. Implanting operations are then performed with a dopant on the BARC layer and the metal layer to create a crust layer on top of the BARC layer. Unwanted metal layer sections are removed using wet etching operations, with the crust layer and BARC layer protecting the remaining metal layer sections. The crust layer and BARC layer are then removed, and the contact is formed in the opening over the remaining metal layer sections.
- Metal layer and BARC layer are formed in an opening of a semiconductor structure.
- Implanting operations with a dopant are performed to create a crust layer on top of the BARC layer.
- Unwanted metal layer sections are removed using wet etching operations, with the crust layer and BARC layer protecting the remaining metal layer sections.
- The crust layer and BARC layer are removed.
- The contact is formed in the opening over the remaining metal layer sections.
Potential applications of this technology:
- Semiconductor manufacturing industry
- Electronics industry
Problems solved by this technology:
- Protects remaining metal layer sections during wet etching operations
- Provides a method for fabricating a contact in a semiconductor device
Benefits of this technology:
- Simplifies the process of fabricating a contact in a semiconductor device
- Improves the efficiency and reliability of the contact formation process
Original Abstract Submitted
Disclosed is a method of fabricating a contact in a semiconductor device. The method includes: receiving a semiconductor structure having an opening into which the contact is to be formed; forming a metal layer in the opening; forming a bottom anti-reflective coating (BARC) layer in the opening; performing implanting operations with a dopant on the BARC layer and the metal layer, the performing implanting operations including controlling an implant energy level and controlling an implant dosage level to form a crust layer with a desired minimum depth on top of the BARC layer; removing unwanted metal layer sections using wet etching operations, wherein the crust layer and BARC layer protect remaining metal layer sections under the BARC layer from metal loss during the wet etching operations; removing the crust layer and the BARC layer; and forming the contact in the opening over the remaining metal layer sections.
