17806902. SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
Organization Name
Inventor(s)
SEUNGWEON Ha of CHEONAN-SI (KR)
JAEYOUNG Hong of HWASEONG-SI (KR)
SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17806902 titled 'SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
Simplified Explanation
The patent application describes a semiconductor device that includes a substrate with different regions. It has a stack structure with vertically stacked and spaced apart electrodes on the cell array region. A dummy structure extends from the peripheral region to the scribe lane region and includes alternating layers of dielectric material. A vertical channel structure penetrates the stack structure, and there is a slit in the dummy structure on the scribe lane region.
- The semiconductor device has a substrate with different regions: cell array, peripheral, and scribe lane.
- The stack structure on the cell array region includes vertically stacked and spaced apart electrodes.
- A dummy structure extends from the peripheral region to the scribe lane region and consists of alternating layers of dielectric material.
- A vertical channel structure penetrates the stack structure.
- There is a slit in the dummy structure on the scribe lane region, perpendicular to the top surface of the substrate, and it goes through at least a part of the dummy structure.
- The slit includes a void.
Potential Applications
- This semiconductor device can be used in various electronic devices such as smartphones, tablets, and computers.
- It can be applied in memory devices, processors, and other integrated circuits.
Problems Solved
- The dummy structure with alternating dielectric layers helps in reducing parasitic capacitance and improving device performance.
- The slit in the dummy structure allows for better control of electrical characteristics and reduces interference between different regions of the device.
Benefits
- Improved device performance due to reduced parasitic capacitance.
- Better control of electrical characteristics.
- Reduced interference between different regions of the device.
Original Abstract Submitted
A semiconductor device includes a substrate that includes a cell array region, a peripheral region, and a scribe lane region. A stack structure is disposed on the cell array region of the substrate and includes electrodes that are vertically stacked and spaced apart from each other. A dummy structure extends from the peripheral region to the scribe lane region of the substrate and includes first dielectric layers and second dielectric layers that are alternately and repeatedly stacked. A vertical channel structure penetrates the stack structure, and a slit in the dummy structure on the scribe lane region. The slit extends in a direction that is perpendicular to a top surface of the substrate and penetrates at least a portion of the dummy structure. The slit includes a void.
