17806511. DAMASCENE MRAM DEVICE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

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DAMASCENE MRAM DEVICE

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

Koichi Motoyama of Clifton Park NY (US)

Oscar Van Der Straten of Guilderland Center NY (US)

Chih-Chao Yang of Glenmont NY (US)

DAMASCENE MRAM DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17806511 titled 'DAMASCENE MRAM DEVICE

Simplified Explanation

The abstract describes a magnetic tunnel junction (MTJ) stack with a saw tooth edge on its vertical side surface. The stack consists of vertically aligned layers including a top electrode, a free layer, a tunneling barrier, a reference layer, and a bottom electrode. The free layer has a tapered edge, with a wider width at the upper portion and a narrower width at the lower portion.

  • The MTJ stack has a saw tooth edge on its vertical side surface.
  • The stack includes vertically aligned layers: top electrode, free layer, tunneling barrier, reference layer, and bottom electrode.
  • The free layer has a tapered edge, with a wider width at the upper portion and a narrower width at the lower portion.

Potential applications of this technology:

  • Magnetic storage devices
  • Magnetic sensors
  • Spintronics devices

Problems solved by this technology:

  • Improved performance and efficiency of magnetic tunnel junctions
  • Enhanced control over magnetic properties
  • Reduction of stray magnetic fields

Benefits of this technology:

  • Higher data storage density
  • Faster data access and transfer rates
  • Lower power consumption
  • Improved reliability and durability


Original Abstract Submitted

A magnetic tunnel junction (MTJ) stack, a vertical side surface of the MTJ stack includes a saw tooth edge, the MTJ stack includes vertically aligned layers of a top electrode, a free layer, a tunneling barrier, a reference layer and a bottom electrode, the free layer of the MTJ stack has a tapered edge including a first width at an upper portion of the free layer and a second width at a lower portion of the free layer, the first width is greater than the second width. Forming a first bottom electrode of a first MTJ stack, a second bottom electrode of a second MTJ stack, a first inter-layer dielectric between the first and the second bottom electrode, a first reference layer of the first MTJ stack, a second reference layer of the second MTJ stack, a second inter-layer dielectric between the first reference layer and the second reference layer.

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