17771720. METHOD FOR MANUFACTURING DISPLAY SUBSTRATE simplified abstract (BOE TECHNOLOGY GROUP CO., LTD.)
Contents
METHOD FOR MANUFACTURING DISPLAY SUBSTRATE
Organization Name
BOE TECHNOLOGY GROUP CO., LTD.
Inventor(s)
Chenglong Wang of Beijing (CN)
METHOD FOR MANUFACTURING DISPLAY SUBSTRATE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17771720 titled 'METHOD FOR MANUFACTURING DISPLAY SUBSTRATE
Simplified Explanation
The patent application describes a method for manufacturing a display substrate. The method involves forming active layers in different regions of the substrate, coating these layers with a photoresist, and creating patterns on the photoresist to expose specific areas of the active layers. N-type heavily doped regions are then formed using the exposed areas as a mask.
- The method involves forming active layers in different regions of the display substrate.
- A photoresist layer is applied to one side of each active layer.
- The photoresist layer is patterned to expose specific areas of the active layers.
- N-type heavily doped regions are formed using the exposed areas as a mask.
Potential applications of this technology:
- Manufacturing of display substrates for electronic devices such as smartphones, tablets, and televisions.
Problems solved by this technology:
- Provides a method for manufacturing display substrates with precise and controlled doping of specific regions.
- Enables the production of high-performance transistors for displays.
Benefits of this technology:
- Allows for improved performance and efficiency of electronic displays.
- Enhances the overall quality and resolution of the display.
- Enables the production of thinner and lighter electronic devices.
Original Abstract Submitted
A method for manufacturing a display substrate is provided. The method includes: forming a first active layer arranged in the NMOS transistor region and a second active layer arranged in the PMOS transistor region on the base substrate; coating one side, facing away from the base substrate, of the first active layer and one side, facing away from the base substrate, of the second active layer with a first photoresist layer, forming a first pattern layer by patterning the first photoresist layer to expose at least two ends of the first active layer; forming N-type heavily doped regions by performing N-type heavy doping on the two ends of the first active layer with the first pattern layer as a mask; forming a second pattern layer by processing the first pattern layer to expose at least a middle region of the first active layer.
