17751740. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 17751740 titled 'SEMICONDUCTOR DEVICES
Simplified Explanation
The patent application describes a semiconductor device that includes a substrate, an etch stop layer, a through-hole electrode, and a conductive pad. The etch stop layer is positioned on the substrate and has two surfaces. The through-hole electrode extends through the substrate and the etch stop layer in a vertical direction. The conductive pad covers a protrusion portion of the through-hole electrode, which is not flat.
- The semiconductor device includes a substrate, etch stop layer, through-hole electrode, and conductive pad.
- The etch stop layer is positioned on the substrate and has two surfaces.
- The through-hole electrode extends through the substrate and etch stop layer vertically.
- The conductive pad covers a non-flat protrusion portion of the through-hole electrode.
Potential Applications
- Semiconductor manufacturing
- Electronics industry
- Integrated circuits
Problems Solved
- Provides a structure for a semiconductor device with improved electrical connections.
- Ensures proper coverage and contact between the through-hole electrode and the conductive pad.
- Prevents potential issues caused by a flat protrusion portion of the through-hole electrode.
Benefits
- Enhanced electrical performance and reliability of the semiconductor device.
- Improved manufacturing process for semiconductor devices.
- Increased functionality and efficiency of integrated circuits.
Original Abstract Submitted
A semiconductor device includes a substrate, an etch stop layer on the substrate, a through-hole electrode extending through the substrate and the etch stop layer in a vertical direction substantially perpendicular to an upper surface of the substrate, and a conductive pad. The etch stop layer includes a first surface adjacent to the substrate and a second surface opposite the first surface. The through-hole electrode includes a protrusion portion that protrudes from the second surface of the etch stop layer. The conductive pad covers the protrusion portion of the through-hole electrode. The protrusion portion of the through-hole electrode is not flat.
