17748270. METHODS AND APPARATUS FOR PROCESSING A SUBSTRATE simplified abstract (Applied Materials, Inc.)
Contents
METHODS AND APPARATUS FOR PROCESSING A SUBSTRATE
Organization Name
Inventor(s)
Gaurav Shrivastava of Bengaluru (IN)
Pavankumar Ramanand Harapanhalli of Bangalore (IN)
Yao-Hung Yang of Santa Clara CA (US)
Sudhir R. Gondhalekar of Fremont CA (US)
Chih-Yang Chang of Santa Clara CA (US)
METHODS AND APPARATUS FOR PROCESSING A SUBSTRATE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17748270 titled 'METHODS AND APPARATUS FOR PROCESSING A SUBSTRATE
Simplified Explanation
The patent application describes methods and apparatus for processing a substrate, such as a semiconductor wafer. It specifically focuses on a pressure system used in the processing volume to control the pressure.
- The pressure system includes a throttle valve assembly, which consists of a housing, a sensing device, and a fan.
- The sensing device is located inside the housing and is designed to detect temperature changes within the housing.
- When the pressure system is operating to control the pressure in the processing volume, the sensing device ensures that the fan remains off if the temperature inside the housing is below a certain predetermined temperature.
- However, when the temperature inside the housing reaches or exceeds the predetermined temperature, the sensing device automatically turns on the fan.
Potential applications of this technology:
- Semiconductor manufacturing: The processing of substrates, such as semiconductor wafers, often requires precise control of pressure. This technology can be used in semiconductor fabrication processes to maintain the desired pressure levels in the processing volume.
- Thin film deposition: Thin film deposition techniques, such as chemical vapor deposition (CVD) or physical vapor deposition (PVD), can benefit from accurate pressure control. The described pressure system can be utilized in these processes to ensure optimal conditions for thin film growth.
Problems solved by this technology:
- Maintaining pressure control: The pressure system described in the patent application helps to maintain the desired pressure levels in the processing volume by automatically adjusting the fan based on temperature changes.
- Preventing overheating: By turning on the fan when the temperature inside the housing reaches a certain threshold, the technology prevents overheating of the pressure system components, ensuring their longevity and reliability.
Benefits of this technology:
- Improved process control: The accurate control of pressure in the processing volume enhances the quality and consistency of the substrate processing, leading to improved overall process control.
- Extended equipment lifespan: By preventing overheating, the technology helps to prolong the lifespan of the pressure system components, reducing maintenance and replacement costs.
- Energy efficiency: The fan is only activated when necessary, based on temperature changes, resulting in energy savings during operation.
Original Abstract Submitted
Methods and apparatus for processing a substrate are provided herein. For example, a processing volume for processing a substrate and a pressure system in fluid communication with the processing volume and comprising a throttle valve assembly including a housing, a sensing device disposed in an interior of the housing, and a fan open to the interior of the housing, wherein, during operation of the pressure system to control a pressure within the processing volume, the sensing device is responsive to temperature changes in the interior of the housing such that the fan remains off when a temperature of the interior of the housing is less than a predetermined temperature and automatically turns on when the temperature within interior of the housing is equal to or greater than the predetermined temperature.
