17748127. EMBEDDED DEVICE INCLUDING MRAM DEVICE simplified abstract (Samsung Electronics Co., Ltd.)

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EMBEDDED DEVICE INCLUDING MRAM DEVICE

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Jaehoon Kim of Seoul (KR)

EMBEDDED DEVICE INCLUDING MRAM DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17748127 titled 'EMBEDDED DEVICE INCLUDING MRAM DEVICE

Simplified Explanation

The abstract describes an embedded device that includes a magnetic random access memory (MRAM) region with magnetic tunnel junction (MTJ) modules. The device also includes insulating interlayer structures and magnetic field shielding structures.

  • The embedded device has a substrate with a MRAM region.
  • The MRAM region contains cell block regions with MTJ modules.
  • Each MTJ module has a MTJ pattern.
  • The MTJ modules are covered by an insulating interlayer structure.
  • Magnetic field shielding structures are present in the insulating interlayer structure.
  • The magnetic field shielding structures extend vertically from the upper end to the lower end of the MTJ pattern.
  • The magnetic field shielding structures are made of a ferromagnetic material.

Potential Applications

  • Embedded devices requiring magnetic random access memory (MRAM).
  • Electronics and computer systems that benefit from non-volatile memory technology.
  • Devices that require high-speed and low-power memory solutions.

Problems Solved

  • Magnetic interference and disturbances that can affect the performance of MRAM modules.
  • Protection of the MTJ modules from external magnetic fields.
  • Ensuring reliable and stable operation of the embedded device.

Benefits

  • Improved performance and reliability of MRAM modules.
  • Enhanced protection against magnetic interference.
  • Increased durability and lifespan of the embedded device.
  • Efficient and low-power memory solution.


Original Abstract Submitted

An embedded device includes a substrate including a magnetic random access memory (MRAM) region, the MRAM region having a cell block region, magnetic tunnel junction (MTJ) modules in the cell block region, each of the MTJ modules including a MTJ pattern, an insulating interlayer structure covering the MTJ modules, and magnetic field shielding structures in the insulating interlayer structure and adjacent to an outside of the cell block region, each of the magnetic field shielding structures extending in a vertical direction to face at least from an upper end of the MTJ pattern to a lower end of the MTJ pattern, and each of the magnetic field shielding structures including a ferromagnetic material.

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