17747318. METHOD OF STORING DATA IN MEMORIES simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

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METHOD OF STORING DATA IN MEMORIES

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Win-San Khwa of Hsinchu (TW)

Jui-Jen Wu of Hsinchu (TW)

Jen-Chieh Liu of Hsinchu (TW)

Meng-Fan Chang of Hsinchu (TW)

METHOD OF STORING DATA IN MEMORIES - A simplified explanation of the abstract

This abstract first appeared for US patent application 17747318 titled 'METHOD OF STORING DATA IN MEMORIES

Simplified Explanation

The patent application describes a method for storing input data into a memory storage using bit cells. The method involves determining the value of a characterization bit in the input data. Based on the value of the characterization bit, the remaining bits in the input data are written into the bit cells as either a first state or a second state.

  • The method determines the value of a characterization bit in the input data.
  • If the characterization bit has a first value, the remaining bits in the input data are written into the bit cells as a first state.
  • If the characterization bit has a second value that is the complement of the first value, the remaining bits in the input data are written into the bit cells as a second state.
  • Reading the bit cell with the first state consumes less energy than reading the bit cell with the second state.
  • Alternatively, the bit cell with the first state has less retention errors than the bit cell with the second state.

Potential applications of this technology:

  • Memory storage systems
  • Data storage devices
  • Computer systems

Problems solved by this technology:

  • Energy consumption in reading bit cells
  • Retention errors in bit cells

Benefits of this technology:

  • Reduced energy consumption
  • Improved reliability and accuracy of data storage


Original Abstract Submitted

A method of storing an input data of a data set into a memory storage having bit cells. The method includes determining a bit value of a characterization bit in the input data. The method also includes writing each of remaining bits in the input data into one of the bit cells as a first state if the characterization bit has a first value, and writing each of remaining bits in the input data into the bit cells as a second state if the characterization bit has a second value that is complement to the first value. In the method, either reading the bit cell with the first state consumes less energy than reading the bit cell with the second state or the bit cell with the first state has less retention errors than the bit cell with the second state.