17745960. SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

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SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Kiseok Lee of Hwaseong-si (KR)

Keunnam Kim of Yongin-si (KR)

SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17745960 titled 'SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

Simplified Explanation

The patent application describes a semiconductor memory device that includes a stack of layer groups vertically stacked on a substrate. Each layer group consists of a word line, a lower channel layer, an upper channel layer, and a data storing element. The device also includes a vertically extending bit line with a protruding portion connected to the lower and upper channel layers of each layer group. The word line of each layer group is sandwiched between the lower and upper channel layers and extends parallel to the top surface of the substrate.

  • The memory device includes a stack of layer groups vertically stacked on a substrate.
  • Each layer group consists of a word line, a lower channel layer, an upper channel layer, and a data storing element.
  • The bit line extends vertically and has a protruding portion connected to the lower and upper channel layers of each layer group.
  • The word line of each layer group is sandwiched between the lower and upper channel layers and extends parallel to the top surface of the substrate.

Potential Applications:

  • This semiconductor memory device can be used in various electronic devices such as smartphones, tablets, and computers.
  • It can be utilized in data storage systems, improving the performance and capacity of memory devices.

Problems Solved:

  • The memory device solves the problem of limited storage capacity in electronic devices by providing a vertically stacked structure.
  • It addresses the issue of data access speed by utilizing word lines sandwiched between channel layers.

Benefits:

  • The stack structure allows for increased storage capacity in a compact form factor.
  • The vertically extending bit line improves data transfer efficiency.
  • The word line placement between channel layers enhances data access speed and reduces power consumption.


Original Abstract Submitted

A semiconductor memory device including a stack including layer groups vertically stacked on a substrate, each of the layer groups including a word line, a lower channel layer, an upper channel layer, and a data storing element electrically connected to the lower channel layer and the upper channel layer; and a bit line at a side of the stack, the bit line extending vertically, wherein the bit line includes a protruding portion connected to the lower channel layer and the upper channel layer of each layer group, the word line of each layer group extends in a first direction parallel to a top surface of the substrate, and the word line of each layer group is sandwiched between the lower channel layer and the upper channel layer of the layer group.

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