17743849. Semiconductor Device and Method simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
Contents
Semiconductor Device and Method
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Ting-Gang Chen of Taipei City (TW)
Chin-Wei Lin of Taoyuan City (TW)
Semiconductor Device and Method - A simplified explanation of the abstract
This abstract first appeared for US patent application 17743849 titled 'Semiconductor Device and Method
Simplified Explanation
The patent application describes methods for selectively depositing a metal layer over a gate structure in semiconductor devices. Here are the bullet points to explain the patent/innovation:
- The semiconductor device includes a channel region, a gate structure, a gate spacer, a first dielectric layer, a barrier layer, and a metal layer.
- The gate structure is positioned over the channel region on a semiconductor substrate.
- A gate spacer is adjacent to the gate structure, providing a separation between the gate structure and the first dielectric layer.
- The first dielectric layer is adjacent to the gate spacer.
- A barrier layer is in contact with the top surface of the gate spacer and the side surface of the first dielectric layer. The barrier layer is made of a nitride material.
- A metal layer is deposited over the gate structure, adjacent to the barrier layer. The width of the metal layer is equal to the width of the gate structure.
Potential applications of this technology:
- This technology can be used in the manufacturing of semiconductor devices, such as transistors, integrated circuits, and microprocessors.
- It can improve the performance and reliability of these devices by providing a selective metal deposition process over the gate structure.
Problems solved by this technology:
- Selectively depositing a metal layer over a gate structure can be challenging, as it requires precise control and alignment.
- This technology solves the problem by using a barrier layer made of a nitride material, which helps in achieving selective deposition and preventing unwanted metal deposition.
Benefits of this technology:
- The selective metal deposition process improves the overall performance and functionality of semiconductor devices.
- It allows for better control and precision in the manufacturing process, leading to higher quality and reliability of the devices.
- The use of a barrier layer made of a nitride material enhances the selectivity of the metal deposition, reducing the risk of unwanted metal deposition and potential device failure.
Original Abstract Submitted
Methods for selectively depositing a metal layer over a gate structure and semiconductor devices formed by the same are disclosed. In an embodiment, a semiconductor device includes a channel region over a semiconductor substrate; a gate structure over the channel region; a gate spacer adjacent the gate structure; a first dielectric layer adjacent the gate spacer; a barrier layer contacting a top surface of the gate spacer and a side surface of the first dielectric layer, the barrier layer including a nitride; and a metal layer over the gate structure adjacent the barrier layer, the metal layer having a first width equal to a second width of the gate structure.
