17743779. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17743779 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The abstract describes a semiconductor device that includes a substrate, a first capacitor structure, and a first lower electrode. The first capacitor structure consists of multiple first storage electrodes, a first upper electrode, and a first capacitor dielectric layer. The first storage electrodes include a normal storage electrode and a dummy storage electrode, which are not connected to each other.
- The semiconductor device includes a substrate, first capacitor structure, and first lower electrode.
- The first capacitor structure comprises multiple first storage electrodes, a first upper electrode, and a first capacitor dielectric layer.
- The first storage electrodes consist of a normal storage electrode and a dummy storage electrode, which are spaced apart.
- The normal storage electrode is electrically connected to the first lower electrode.
- The dummy storage electrode is not electrically connected to the first lower electrode.
Potential Applications:
- Integrated circuits
- Memory devices
- Microprocessors
- Power electronics
Problems Solved:
- Efficient use of space in semiconductor devices
- Improved performance and functionality of integrated circuits
- Reduction of electrical interference and noise
Benefits:
- Increased storage capacity
- Enhanced circuit performance
- Improved reliability and stability
- Reduced power consumption
- Cost-effective manufacturing process
Original Abstract Submitted
A semiconductor device comprises, a substrate, a first capacitor structure including a plurality of first storage electrodes on the substrate, a first upper electrode on the first storage electrodes and a first capacitor dielectric layer between the plurality of first storage electrodes and the first upper electrode, and a first lower electrode between the first capacitor structure and the substrate and electrically connected with the first capacitor structure. The plurality of first storage electrodes include a first normal storage electrode and a first dummy storage electrode, which are spaced apart from each other. The first normal storage electrode is electrically connected with the first lower electrode, and the first dummy storage electrode is not electrically connected with the first lower electrode.
