17742943. Transistor Isolation Regions and Methods of Forming the Same simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
Transistor Isolation Regions and Methods of Forming the Same
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Chung-Ting Ko of Kaohsiung City (TW)
Sung-En Lin of Hsinchu County (TW)
Transistor Isolation Regions and Methods of Forming the Same - A simplified explanation of the abstract
This abstract first appeared for US patent application 17742943 titled 'Transistor Isolation Regions and Methods of Forming the Same
Simplified Explanation
The patent application describes a device that includes multiple source/drain regions and insulating fins made of different layers of dielectric materials.
- The device has first and second source/drain regions.
- There are insulating fins between the source/drain regions.
- The insulating fins consist of lower and upper layers of dielectric materials.
- The lower layers of the insulating fins in both regions are made of the same dielectric material.
- The upper layers of the insulating fins in both regions are made of different dielectric materials.
Potential applications of this technology:
- Integrated circuits
- Semiconductor devices
- Transistors
Problems solved by this technology:
- Improved performance and efficiency of devices
- Reduction of leakage current
- Enhanced insulation between source/drain regions
Benefits of this technology:
- Increased device reliability
- Enhanced electrical properties
- Better control over device characteristics
Original Abstract Submitted
In an embodiment, a device includes: first source/drain regions; a first insulating fin between the first source/drain regions, the first insulating fin including a first lower insulating layer and a first upper insulating layer; second source/drain regions; and a second insulating fin between the second source/drain regions, the second insulating fin including a second lower insulating layer and a second upper insulating layer, the first lower insulating layer and the second lower insulating layer including the same dielectric material, the first upper insulating layer and the second upper insulating layer including different dielectric materials.
