17740635. SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND METHOD OF PROVIDING BIAS POWER TO THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

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SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND METHOD OF PROVIDING BIAS POWER TO THE SAME

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Hoonsung Choi of Seoul (KR)

Jiyoung Yun of Hwaseong-si (KR)

SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND METHOD OF PROVIDING BIAS POWER TO THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17740635 titled 'SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND METHOD OF PROVIDING BIAS POWER TO THE SAME

Simplified Explanation

The patent application describes a semiconductor integrated circuit device that includes a standard cell, a one-time programmable (OTP) memory structure, and a program transistor. The OTP memory structure is located at the edge of the standard cell and is electrically connected to the program transistor. When a program voltage is applied to the program transistor and a bias power voltage is applied to the OTP memory structure, the anti-fuses in the OTP memory structure become shorted and the bias power voltage is provided to the standard cell.

  • The semiconductor integrated circuit device includes a standard cell, OTP memory structure, and program transistor.
  • The OTP memory structure is located at the edge of the standard cell.
  • The program transistor is positioned adjacent to the edge portion of the standard cell where the OTP memory structure is provided.
  • The program transistor is electrically connected to the OTP memory structure.
  • When a program voltage is applied to the program transistor and a bias power voltage is applied to the OTP memory structure, the anti-fuses in the OTP memory structure become shorted.
  • The bias power voltage is then provided to the standard cell.

Potential Applications

  • This technology can be used in various semiconductor integrated circuit devices, such as microprocessors, memory chips, and communication devices.
  • It can be applied in industries like electronics, telecommunications, and computing.

Problems Solved

  • The one-time programmable (OTP) memory structure allows for the storage of data that cannot be changed or erased, providing a secure and reliable storage solution.
  • The program transistor and anti-fuses enable the programming of the OTP memory structure, allowing for customization and configuration of the integrated circuit device.

Benefits

  • The integration of the OTP memory structure and program transistor within the standard cell simplifies the circuit design and reduces the overall size of the integrated circuit device.
  • The ability to program the OTP memory structure provides flexibility and customization options for the integrated circuit device.
  • The use of anti-fuses ensures reliable and secure programming of the OTP memory structure.


Original Abstract Submitted

A semiconductor integrated circuit device includes a standard cell on a substrate, an one time programmable (OTP) memory structure at an edge portion of the standard cell, and a program transistor outside of the standard cell at a position adjacent to the edge portion of the standard cell at which the OTP memory structure is provided, the program transistor being electrically connected to the OTP memory structure. The OTP memory structure includes a first anti-fuse and a second anti-fuse. When a program voltage is applied to the program transistor and a bias power voltage is applied to the OTP memory structure, each of the first anti-fuse and the second anti-fuse becomes shorted and the bias power voltage is provided to the standard cell.

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