17739783. Semiconductor Device and Method of Forming the Same simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

Semiconductor Device and Method of Forming the Same

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Po-Wei Hu of New Taipei City (TW)

Po-Chin Nien of Taipei City (TW)

Semiconductor Device and Method of Forming the Same - A simplified explanation of the abstract

This abstract first appeared for US patent application 17739783 titled 'Semiconductor Device and Method of Forming the Same

Simplified Explanation

The abstract describes a method for forming a semiconductor device using a semiconductor substrate. Here is a simplified explanation of the abstract:

• The method begins by applying a first film over an active region of one side of the semiconductor substrate and a second film over the opposing side of the substrate.
• A chemical mechanical polishing process is then used to remove at least a portion of the second film.
• After the polishing, a photoresist layer is formed over the first film.
• The photoresist layer is then patterned using extreme ultraviolet radiation.

Potential Applications:

• This method can be used in the manufacturing of various semiconductor devices, such as integrated circuits, transistors, and memory chips.
• It can be applied in industries that rely on semiconductor technology, including electronics, telecommunications, and computing.

Problems Solved:

• The method provides a technique for forming a semiconductor device with improved precision and accuracy.
• It helps in achieving a more uniform and controlled thickness of the films on the semiconductor substrate.
• The use of extreme ultraviolet radiation for patterning the photoresist layer allows for higher resolution and finer features in the semiconductor device.

Benefits:

• The method improves the overall performance and functionality of semiconductor devices.
• It enables the production of smaller and more efficient devices with higher processing speeds.
• The use of extreme ultraviolet radiation enhances the manufacturing process by enabling finer details and reducing defects in the final product.

Original Abstract Submitted

A method of forming a semiconductor device is provided. The method includes forming a first film over an active region of a first side of a semiconductor substrate and a second film over a second side of the semiconductor substrate opposing to the first side of the semiconductor substrate; applying a chemical mechanical polishing to remove at least a portion of the second film; after the chemical mechanical polishing, forming a photoresist layer over the first film; and patterning the photoresist layer using an extreme ultraviolet radiation.