17736821. METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

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METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Yu-Fu Wang of New Taipei City (TW)

Shih-Ming Chang of Hsinchu (TW)

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17736821 titled 'METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

Simplified Explanation

The patent application describes a method of manufacturing a semiconductor device. Here is a simplified explanation of the abstract:

  • The method starts by applying a first tone resist layer on top of an underlayer.
  • The first tone resist layer is then patterned to create a specific design, exposing a part of the underlayer.
  • The pattern is extended into the underlayer, and the first tone resist layer is removed.
  • Next, a second tone resist layer is applied on top of the underlayer, with the second tone being the opposite of the first tone.
  • The second tone resist layer is patterned to form another design, exposing a different part of the underlayer.
  • The pattern is extended into the underlayer, and the second tone resist layer is removed.

Potential applications of this technology:

  • Manufacturing of semiconductor devices, such as integrated circuits and microchips.
  • Fabrication of electronic components used in various industries, including telecommunications, consumer electronics, and automotive.

Problems solved by this technology:

  • Provides a method for creating precise patterns on semiconductor devices.
  • Allows for the formation of multiple patterns with different tones on the same underlayer.
  • Enables the extension of patterns into the underlayer for further processing.

Benefits of this technology:

  • Improved manufacturing efficiency and accuracy.
  • Enables the creation of complex designs and structures on semiconductor devices.
  • Provides flexibility in creating different patterns and designs using different tones of resist layers.


Original Abstract Submitted

A method of manufacturing a semiconductor device includes forming a first tone resist layer over an underlayer. The first tone resist layer is pattern to form a first pattern exposing a portion of the underlayer. The first pattern is extended into the underlayer, and the first tone resist layer is removed. A second tone resist layer is formed over the underlayer, wherein the second tone is opposite the first tone. The second tone resist layer is patterned to form a second pattern exposing another portion of the underlayer. The second pattern is extended into underlayer, and the second tone resist layer is removed.

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