17734772. RESIST TOPCOAT COMPOSITION, AND METHOD OF FORMING PATTERNS USING THE COMPOSITION simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

RESIST TOPCOAT COMPOSITION, AND METHOD OF FORMING PATTERNS USING THE COMPOSITION

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Ran Namgung of Suwon-si (KR)

Hyeon Park of Suwon-si (KR)

Minsoo Kim of Suwon-si (KR)

Daeseok Song of Suwon-si (KR)

Minki Chon of Suwon-si (KR)

Jun Soo Kim of Hwaseong-si (KR)

Hyun-Woo Kim of Seongnam-si (KR)

Hyun-Ji Song of Anyang-si (KR)

Young Joo Choi of Hwaseong-si (KR)

Suk-Koo Hong of Hwaseong-si (KR)

RESIST TOPCOAT COMPOSITION, AND METHOD OF FORMING PATTERNS USING THE COMPOSITION - A simplified explanation of the abstract

This abstract first appeared for US patent application 17734772 titled 'RESIST TOPCOAT COMPOSITION, AND METHOD OF FORMING PATTERNS USING THE COMPOSITION

Simplified Explanation

The patent application describes a resist topcoat composition and a method for forming patterns using this composition. The resist topcoat composition includes an acrylic polymer with a hydroxy group and a fluorine, a mixture of two different acid compounds (sulfonic acid or sulfonimide) with fluorine, and a solvent.

• The resist topcoat composition includes an acrylic polymer with a hydroxy group and a fluorine.
• The composition also includes a mixture of two different acid compounds, which are independently selected from sulfonic acid or sulfonimide compounds.
• The weight ratio of the first acid compound to the second acid compound is between 1:0.1 and 1:50.
• The composition is dissolved in a solvent.

Potential applications of this technology:

• Semiconductor manufacturing: The resist topcoat composition can be used in the fabrication of semiconductor devices, where precise patterning is required.
• Lithography: The composition can be used in lithographic processes to create patterns on substrates.
• Microelectronics: The resist topcoat composition can be used in the production of microelectronic devices, such as integrated circuits.

Problems solved by this technology:

• Improved pattern formation: The resist topcoat composition helps in achieving precise and well-defined patterns on substrates.
• Enhanced resist performance: The combination of the acrylic polymer and the acid compounds improves the resist's resistance to etching and other processing steps.
• Reduced defects: The resist topcoat composition minimizes defects, such as line edge roughness and pattern collapse, during the patterning process.

Benefits of this technology:

• High resolution: The resist topcoat composition enables the formation of patterns with high resolution and accuracy.
• Improved process stability: The composition provides better process stability, resulting in consistent and reliable patterning.
• Increased productivity: The resist topcoat composition allows for faster and more efficient patterning processes, leading to increased productivity in semiconductor manufacturing and other industries.

Original Abstract Submitted

A resist topcoat composition and a method of forming patterns utilizing the resist topcoat composition are disclosed. The resist topcoat composition includes an acrylic polymer comprising a structural unit comprising a hydroxy group and a fluorine; a mixture comprising a first acid compound comprising at least one fluorine; and a second acid compound different from the first acid compound and comprising at least one fluorine, the first acid compound and the second acid compound are each independently selected from a sulfonic acid compound and a sulfonimide compound, the first acid compound and the second acid compound being in a weight ratio of about 1:0.1 to about 1:50; and a solvent.