17733051. SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
Organization Name
Inventor(s)
Jang Eun Lee of Hwaseong-si (KR)
Suk Hoon Kim of Hwaseong-si (KR)
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17733051 titled 'SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
Simplified Explanation
The abstract describes a semiconductor memory device that has improved electric characteristics and reliability. The device includes a substrate with an active region divided by a device separation film. The active region consists of a first part and two second parts on opposite sides of the first part. There is a bit line that extends across the active region on the substrate, and a bit line contact connects the substrate to the first part of the active region. The bit line contact includes a first ruthenium pattern, where the width of the upper surface of the pattern is smaller than the width of the bottom surface.
- The semiconductor memory device has an improved electric characteristic and reliability.
- The device includes a substrate with an active region divided by a device separation film.
- The active region consists of a first part and two second parts on opposite sides of the first part.
- A bit line extends across the active region on the substrate.
- A bit line contact connects the substrate to the first part of the active region.
- The bit line contact includes a first ruthenium pattern.
- The width of the upper surface of the first ruthenium pattern is smaller than the width of the bottom surface.
Potential Applications
- Semiconductor memory devices
- Electronics manufacturing industry
Problems Solved
- Improved electric characteristics and reliability of semiconductor memory devices
Benefits
- Enhanced performance and reliability of semiconductor memory devices
- Improved efficiency in electronics manufacturing industry
Original Abstract Submitted
A semiconductor memory device with an improved electric characteristic and reliability is provided. The semiconductor memory device including a substrate including an active region defined by device separation film, the active region including a first part and second parts, the second parts being on two opposite sides of the first part, respectively a bit line extending on the substrate and across the active region, and a bit line contact between the substrate and the bit line and connected to the first part of the active region may be provided. The bit line contact includes a first ruthenium pattern, and a width of upper surface of the first ruthenium pattern is smaller than a width of bottom surface of the first ruthenium pattern.
