17725917. METHOD OF INSPECTING A WAFER AND APPARATUS FOR PERFORMING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 METHOD OF INSPECTING A WAFER AND APPARATUS FOR PERFORMING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METHOD OF INSPECTING A WAFER AND APPARATUS FOR PERFORMING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Abstract Explanation
- 1.6 Bullet Points
- 1.7 Potential Applications
- 1.8 Problems Solved
- 1.9 Benefits
- 1.10 Original Abstract Submitted
METHOD OF INSPECTING A WAFER AND APPARATUS FOR PERFORMING THE SAME
Organization Name
Inventor(s)
Juntaek Oh of Hwaseong-si (KR)
METHOD OF INSPECTING A WAFER AND APPARATUS FOR PERFORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17725917 titled 'METHOD OF INSPECTING A WAFER AND APPARATUS FOR PERFORMING THE SAME
Simplified Explanation
Abstract Explanation
The patent application describes a method for inspecting a wafer, which involves measuring the intensity of incident light and storing it as stored incident light intensity. The method also includes irradiating the incident light onto the wafer, measuring the intensity of the reflected light from the wafer, and storing it as stored reflected light intensity. The stored reflected light intensity is then corrected based on the difference between the stored incident light intensity and a reference intensity of a reference incident light.
Bullet Points
- Measures the intensity of incident light and stores it as stored incident light intensity
- Irradiates the incident light onto the wafer
- Measures the intensity of reflected light from the wafer and stores it as stored reflected light intensity
- Corrects the stored reflected light intensity based on the difference between the stored incident light intensity and a reference intensity of a reference incident light
Potential Applications
- Semiconductor manufacturing: This method can be used to inspect wafers during the manufacturing process, ensuring the quality and reliability of semiconductor devices.
- Quality control: The method can be applied in various industries to inspect the surface of materials or products, detecting any defects or abnormalities.
- Optical inspection systems: The technology can be integrated into optical inspection systems used in research, development, or production environments.
Problems Solved
- Accurate measurement: The method provides a way to accurately measure the intensity of incident and reflected light, allowing for precise inspection and analysis of the wafer or material being examined.
- Calibration: By correcting the reflected light intensity based on a reference incident light, the method ensures that the measurements are calibrated and reliable.
- Efficiency: The method streamlines the inspection process by combining the measurement and correction steps, reducing the time and effort required for inspection.
Benefits
- Improved quality control: The method enables the detection of defects or abnormalities in wafers or materials, ensuring that only high-quality products are released.
- Cost savings: By identifying and addressing issues early in the manufacturing process, the method helps to minimize waste, rework, and production delays, leading to cost savings.
- Enhanced productivity: The streamlined inspection process allows for faster and more efficient inspection, increasing overall productivity in manufacturing or research environments.
Original Abstract Submitted
A method of inspecting a wafer comprising measuring an intensity of an incident light and storing the measurement as stored incident light intensity, irradiating the incident light to the wafer, measuring an intensity of a reflected light from the wafer and storing the measurement as stored reflected light intensity, and correcting the stored reflected light intensity based on a difference between the stored incident light intensity and a reference intensity of a reference incident light.
