17724344. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Jongmin Lee of Hwaseong-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17724344 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The patent application describes a semiconductor device that includes a cell capacitor and a decoupling capacitor.
- The cell capacitor consists of lower electrodes, an upper support layer pattern, a dielectric layer, and an upper electrode.
- The decoupling capacitor consists of lower electrodes, an upper support layer pattern, a dielectric layer, and an upper electrode.
- The lower electrodes of both capacitors are arranged in a honeycomb pattern at each vertex of a hexagon and the center of the hexagon.
- The upper support layer pattern of the cell capacitor is connected to the upper sidewalls of the lower electrodes and has openings that define a first plate.
- The upper support layer pattern of the decoupling capacitor is connected to the upper sidewalls of the lower electrodes and has openings that define a second plate with a different shape from the first plate.
Potential applications of this technology:
- Semiconductor manufacturing industry
- Electronics industry
- Integrated circuit design
Problems solved by this technology:
- Improved performance and efficiency of semiconductor devices
- Enhanced decoupling capabilities for reducing noise and interference
Benefits of this technology:
- Higher capacitance density
- Improved signal integrity
- Reduced power consumption
- Enhanced overall device performance
Original Abstract Submitted
A semiconductor device may include a cell capacitor including first lower electrodes, a first upper support layer pattern, a first dielectric layer, and a first upper electrode. The decoupling capacitor may include second lower electrodes, a second upper support layer pattern, a second dielectric layer, and a second upper electrode. The first and second lower electrodes may be arranged in a honeycomb pattern at each vertex of a hexagon and a center of the hexagon. The first upper support layer pattern may be connected to upper sidewalls of the first lower electrodes. The first upper support layer pattern may correspond to a first plate defining first openings. The second upper support layer pattern may be connected to upper sidewalls of the second electrodes. The second upper support layer pattern may correspond to a second plate defining second openings having a shape different from a shape of the first opening.
