17724006. MEMORY DEVICE HAVING SUB WORDLINE DRIVER simplified abstract (Samsung Electronics Co., Ltd.)
Contents
MEMORY DEVICE HAVING SUB WORDLINE DRIVER
Organization Name
Inventor(s)
Myeongsik Ryu of Anyang-si (KR)
Bokyeon Won of Namyangju-si (KR)
Kyoungmin Kim of Namyangju-si (KR)
Sangwook Park of Hwaseong-si (KR)
MEMORY DEVICE HAVING SUB WORDLINE DRIVER - A simplified explanation of the abstract
This abstract first appeared for US patent application 17724006 titled 'MEMORY DEVICE HAVING SUB WORDLINE DRIVER
Simplified Explanation
The patent application describes a memory device that includes sub wordline drivers and transistors connected to wordlines and gate lines in a specific configuration.
- The memory device includes a first sub wordline driver with a first active region connected to a first wordline through a first direct contact.
- A first transistor is connected to a first gate line, which extends in the same direction as the first wordline.
- The memory device also includes a second sub wordline driver with a second active region connected to a second wordline through a second direct contact.
- The second direct contact and the first direct contact are parallel to each other and extend in a direction perpendicular to the first direction.
- A second transistor is connected to a second gate line, which extends in the first direction.
- A third wordline driven by a third sub wordline driver is positioned between the first wordline and the second wordline.
Potential applications of this technology:
- Memory devices in electronic devices such as smartphones, tablets, and computers.
- Data storage systems in servers and data centers.
- Embedded memory in various electronic devices.
Problems solved by this technology:
- Efficient and reliable operation of memory devices.
- Improved performance and speed of data storage and retrieval.
- Enhanced integration of memory components in electronic devices.
Benefits of this technology:
- Increased memory capacity and density.
- Reduced power consumption.
- Faster data access and processing.
- Improved overall performance and functionality of electronic devices.
Original Abstract Submitted
A memory device includes a first sub wordline driver including a first active region connected to a first wordline through a first direct contact, and a first transistor connected to a first gate line, the first gate line and the first wordline extending in a first direction, and a second sub wordline driver including a second active region connected to a second wordline through a second direct, the second direct contact and first direct contact extending in parallel in a second direction, the second direction being perpendicular to the first direction. A second transistor is connected to a second gate line. The second gate line extends in the first direction. A third wordline driven by a third sub wordline driver is between the first wordline and the second wordline.
