17723959. STORAGE CONTROLLER DETERMINING ERROR COUNT, METHOD OF OPERATING THE SAME, AND METHOD OF OPERATING STORAGE DEVICE INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
STORAGE CONTROLLER DETERMINING ERROR COUNT, METHOD OF OPERATING THE SAME, AND METHOD OF OPERATING STORAGE DEVICE INCLUDING THE SAME
Organization Name
Inventor(s)
Woohyun Kang of Hwaseong-si (KR)
Donghoo Lim of Hwaseong-si (KR)
STORAGE CONTROLLER DETERMINING ERROR COUNT, METHOD OF OPERATING THE SAME, AND METHOD OF OPERATING STORAGE DEVICE INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17723959 titled 'STORAGE CONTROLLER DETERMINING ERROR COUNT, METHOD OF OPERATING THE SAME, AND METHOD OF OPERATING STORAGE DEVICE INCLUDING THE SAME
Simplified Explanation
The disclosed patent application describes a method for operating a storage controller that communicates with a non-volatile memory device. Here is a simplified explanation of the abstract:
- The method involves sending a command to the non-volatile memory device to request on-chip valley search (OVS) count data for a specific memory region.
- The OVS count data includes two count values, one for a first read voltage and another for a second read voltage.
- The method then receives the OVS count data from the non-volatile memory device.
- Based on the OVS count data, the method determines error count values for both the first and second read voltages.
- Finally, the method determines the next operation based on these error count values.
Potential applications of this technology:
- This method can be used in storage controllers for various devices such as solid-state drives (SSDs), memory cards, and USB flash drives.
- It can improve the reliability and performance of non-volatile memory devices by accurately determining error count values.
Problems solved by this technology:
- Non-volatile memory devices can experience errors during read operations, which can lead to data corruption or loss.
- This method helps identify and quantify these errors by analyzing the OVS count data, allowing for appropriate corrective actions.
Benefits of this technology:
- By accurately determining error count values, this method enables storage controllers to make informed decisions on how to handle data read operations.
- It can help optimize the performance and lifespan of non-volatile memory devices by identifying problematic areas and taking appropriate actions.
- This technology enhances the overall reliability and data integrity of storage systems that utilize non-volatile memory devices.
Original Abstract Submitted
Disclosed is a method of operating a storage controller which communicates with a non-volatile memory device. The method includes outputting a first command including a request for on-chip valley search (OVS) count data of a memory region of the non-volatile memory device to the non-volatile memory device, wherein the OVS count data include a first count value of a first read voltage and a second count value of a second read voltage, receiving the OVS count data from the non-volatile memory device, determining a first error count value for the first read voltage and a second error count value for the second read voltage, based on the OVS count data, and determining a subsequent operation, based on the first and second error count values.
