17720872. EPITAXY STRUCTURE INCLUDING A PLURALITY OF SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

EPITAXY STRUCTURE INCLUDING A PLURALITY OF SEMICONDUCTOR DEVICES

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Junhee Choi of Seongnam-si (KR)

Kiho Kong of Suwon-si (KR)

Nakhyun Kim of Yongin-si (KR)

Joosung Kim of Seongnam-si (KR)

Younghwan Park of Seongnam-si (KR)

Junghun Park of Yongin-si (KR)

Dongchul Shin of Suwon-si (KR)

Eunsung Lee of Seoul (KR)

Joohun Han of Hwaseong-si (KR)

EPITAXY STRUCTURE INCLUDING A PLURALITY OF SEMICONDUCTOR DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 17720872 titled 'EPITAXY STRUCTURE INCLUDING A PLURALITY OF SEMICONDUCTOR DEVICES

Simplified Explanation

The patent application describes an epitaxy structure that includes a substrate with a single crystal structure, a two-dimensional material layer on top of the substrate, and multiple nanorod light emitting devices on the two-dimensional material layer. Each nanorod light emitting device consists of a light emitting nanorod and a passivation film next to its sidewall.

• The epitaxy structure includes a substrate with a single crystal structure.
• A two-dimensional material layer is placed on top of the substrate.
• Multiple nanorod light emitting devices are positioned on the two-dimensional material layer.
• Each nanorod light emitting device has a nanorod shape extending vertically.
• Each nanorod light emitting device includes a light emitting nanorod.
• A passivation film is placed adjacent to the sidewall of the light emitting nanorod.
• The passivation film provides insulation.

Potential applications of this technology:

• Optoelectronic devices
• Solid-state lighting
• Display technology
• Photovoltaics
• Sensors

Problems solved by this technology:

• Enhances the performance and efficiency of light emitting devices
• Provides a compact and efficient structure for light emission
• Improves the stability and reliability of the devices

Benefits of this technology:

• Higher brightness and efficiency of light emission
• Improved device performance and reliability
• Compact and versatile design for various applications

Original Abstract Submitted

Provided is an epitaxy structure including a substrate having an upper surface, the upper surface having a single crystal structure, a two-dimensional material layer disposed on the upper surface of the substrate, and a plurality of nanorod light emitting devices disposed on an upper surface of the two-dimensional material layer, each of the plurality of nanorod light emitting devices having a nanorod shape extending in a vertical direction, wherein each of the plurality of nanorod light emitting devices includes a light emitting nanorod, and a passivation film disposed adjacent to a sidewall of the light emitting nanorod, the passivation film having insulation.