17720376. SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)

SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Suhwan Lim of Hanam-si (KR)

Nambin Kim of Seoul (KR)

Samki Kim of Hwaseong-si (KR)

Taehun Kim of Gwacheon-si (KR)

Hanvit Yang of Suwon-si (KR)

Changhee Lee of Hwaseong-si (KR)

Jaehun Jung of Seongnam-si (KR)

Hyeongwon Choi of Suwon-si (KR)

SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17720376 titled 'SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME

Simplified Explanation

The patent application describes a semiconductor device that includes a lower structure, a stack structure, and a channel structure. The channel structure includes a core insulating layer, a channel layer, a gate dielectric layer, and a channel pad. The channel pad overlaps the uppermost gate electrode and includes a first pad layer and a second pad layer, with the second pad layer being doped with impurities and having N-type conductivity.

• The semiconductor device includes a lower structure with circuit devices on a semiconductor substrate.
• The stack structure includes alternating interlayer insulating layers and gate electrodes in a vertical direction.
• The channel structure penetrates the stack structure and includes a core insulating layer, a channel layer, a gate dielectric layer, and a channel pad.
• The channel pad overlaps the uppermost gate electrode in a horizontal direction.
• The channel pad includes a first pad layer and a second pad layer, with the second pad layer being doped with impurities and having N-type conductivity.
• The first pad layer includes either an undoped polysilicon region or a doped polysilicon region with N-type conductivity and lower impurity concentration than the second pad layer.

Potential applications of this technology:

• Semiconductor manufacturing industry
• Electronics industry
• Integrated circuit design and production

Problems solved by this technology:

• Improved performance and functionality of semiconductor devices
• Enhanced conductivity and control of electrical properties

Benefits of this technology:

• Higher efficiency and reliability of semiconductor devices
• Improved integration and miniaturization of circuits
• Enhanced control and manipulation of electrical signals

Original Abstract Submitted

A semiconductor device includes a lower structure including a semiconductor substrate and circuit devices on the semiconductor substrate; a stack structure including interlayer insulating layers and gate electrodes alternating in a vertical direction; and a channel structure penetrating the stack structure. The channel structure includes a core insulating layer, a channel layer, a gate dielectric layer, and a channel pad. A portion of the channel pad overlaps an uppermost gate electrode among the gate electrodes in a horizontal direction. The channel pad includes a first pad layer and a second pad layer on the first pad layer. The second pad layer includes doped polysilicon that is doped with impurities and having N-type conductivity. The first pad layer includes at least one of an undoped polysilicon region and a doped polysilicon region having N-type conductivity and having an impurity concentration lower than an impurity concentration of the second pad layer.