View source for 17716460. SEMICONDUCTOR DEVICE, ARRAY STRUCTURE OF SEMICONDUCTOR DEVICES, NEUROMORPHIC CIRCUIT INCLUDING THE SEMICONDUCTOR DEVICES, AND COMPUTING APPARATUS INCLUDING THE NEUROMORPHIC CIRCUIT simplified abstract (Samsung Electronics Co., Ltd.)

=SEMICONDUCTOR DEVICE, ARRAY STRUCTURE OF SEMICONDUCTOR DEVICES, NEUROMORPHIC CIRCUIT INCLUDING THE SEMICONDUCTOR DEVICES, AND COMPUTING APPARATUS INCLUDING THE NEUROMORPHIC CIRCUIT=


==Organization Name==

[[:Category:Samsung Electronics Co., Ltd.|Samsung Electronics Co., Ltd.]]


[[Category:Samsung Electronics Co., Ltd.]]

==Inventor(s)==

[[:Category:Jaechul Park of Yongin-si (KR)|Jaechul Park of Yongin-si (KR)]][[Category:Jaechul Park of Yongin-si (KR)]]

[[:Category:Youngkwan Cha of Hwaseong-si (KR)|Youngkwan Cha of Hwaseong-si (KR)]][[Category:Youngkwan Cha of Hwaseong-si (KR)]]

==SEMICONDUCTOR DEVICE, ARRAY STRUCTURE OF SEMICONDUCTOR DEVICES, NEUROMORPHIC CIRCUIT INCLUDING THE SEMICONDUCTOR DEVICES, AND COMPUTING APPARATUS INCLUDING THE NEUROMORPHIC CIRCUIT - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17716460 titled 'SEMICONDUCTOR DEVICE, ARRAY STRUCTURE OF SEMICONDUCTOR DEVICES, NEUROMORPHIC CIRCUIT INCLUDING THE SEMICONDUCTOR DEVICES, AND COMPUTING APPARATUS INCLUDING THE NEUROMORPHIC CIRCUIT

==Simplified Explanation==

The abstract describes a semiconductor device that includes multiple layers and regions to enhance its functionality. 

* The device consists of a semiconductor layer with a source region and a drain region, which are separated from each other.
* An insulating layer surrounds the semiconductor layer to provide isolation and protection.
* A first gate electrode layer surrounds the insulating layer to control the flow of current.
* A ferroelectric layer is placed on top of the first gate electrode layer to introduce ferroelectric properties.
* A second gate electrode layer is provided on the ferroelectric layer to further control the device's behavior.

Potential applications of this technology:

* This semiconductor device can be used in various electronic devices such as computers, smartphones, and tablets.
* It can be utilized in memory devices, logic circuits, and other integrated circuits.
* The ferroelectric layer enables non-volatile memory, which retains data even when power is lost.

Problems solved by this technology:

* The addition of the ferroelectric layer allows for non-volatile memory, which eliminates the need for constant power supply to retain data.
* The device structure provides improved control over the flow of current, enhancing the overall performance and efficiency.

Benefits of this technology:

* The semiconductor device offers improved functionality and performance compared to traditional devices.
* It enables non-volatile memory, which can enhance the reliability and power efficiency of electronic devices.
* The device structure allows for better control over current flow, leading to improved circuit design and performance.


==Original Abstract Submitted==

A semiconductor device includes a semiconductor layer extending in a first direction and including a source region and a drain region, which are apart from each other in the first direction; an insulating layer surrounding the semiconductor layer; a first gate electrode layer surrounding the insulating layer; a ferroelectric layer provided on the first gate electrode layer; and a second gate electrode layer provided on the ferroelectric layer.



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